C and Si ion implantation and the origins of yellow luminescence in GaN

doi:10.1007/s00339-003-2384-1

IMR OpenIR

	C and Si ion implantation and the origins of yellow luminescence in GaN
	Dai, L ; Ran, GZ ; Zhang, JC ; Duan, XF ; Lian, WC ; Qin, GG
通讯作者	Qin, GG()
	2004-06-01
发表期刊	APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN	0947-8396
卷号	79 期号:1 页码:139-142
摘要	We have studied the influence of C and Si ion implantation with different implantation doses on yellow luminescence (YL) from GaN. Three kinds of GaN samples were used. In their as-grown states, #1 samples had strong YL, #2 samples had no YL, while #3 samples had weak YL. Our experimental results show that: (i) after annealing at 950 degreesC, the YL intensity for Si ion implanted #1 sample decreased with increasing implantation dose, while that for C ion implanted #1 sample exhibited a reverse rule; (ii) for #2 samples, C ion implantation produced much stronger YL than Si ion implantation did after annealing at 950 degreesC; (iii) the YL intensity sequence for Si ion implanted and 950 degreesC annealed #1, #2, and #3 samples was consistent with that for the unimplanted #1, #2, and #3 samples. However, the YL intensity sequence for the C ion implanted and 950 degreesC annealed #1, #2, and #3 samples reversed with that for the unimplanted ones. In order to explain all these phenomena, we suggested a physical model which claims that the deep C center is another important origin of YL in GaN, and during C ion implantation, the C ion prefers to combine with a V-Ga to form a C-Ga.
DOI	10.1007/s00339-003-2384-1
收录类别	SCI
语种	英语
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000220385600024
出版者	SPRINGER-VERLAG
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/81845
通讯作者	Qin, GG
作者单位	1.Peking Univ, Sch Phys, Beijing 100871, Peoples R China 2.Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China 3.Acad Sinica, Int Ctr Mat Phys, Shenyang 110015, Peoples R China
推荐引用方式 GB/T 7714	Dai, L,Ran, GZ,Zhang, JC,et al. C and Si ion implantation and the origins of yellow luminescence in GaN[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2004,79(1):139-142.
APA	Dai, L,Ran, GZ,Zhang, JC,Duan, XF,Lian, WC,&Qin, GG.(2004).C and Si ion implantation and the origins of yellow luminescence in GaN.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,79(1),139-142.
MLA	Dai, L,et al."C and Si ion implantation and the origins of yellow luminescence in GaN".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 79.1(2004):139-142.