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一种金属氧化物多孔单晶阵列薄膜的制备方法
刘岗; 甄超; 吴亭亭; 成会明
2018-11-06
Rights Holder中国科学院金属研究所
Subtype发明专利
Patent Number201510349012.X
Document Type专利
Identifierhttp://ir.imr.ac.cn/handle/321006/82011
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
刘岗,甄超,吴亭亭,等. 一种金属氧化物多孔单晶阵列薄膜的制备方法. 201510349012.X[P]. 2018-11-06.
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