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Annealing ambient controlled deep defect formation in InP
Zhao, YW; Dong, ZY; Duan, ML; Sun, WR; Zeng, YP; Sun, NF; Sun, TN
Corresponding AuthorZhao, YW(zhaoyw@red.semi.ac.nc)
2004-07-01
Source PublicationEUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
ISSN1286-0042
Volume27Issue:1-3Pages:167-169
AbstractDeep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy (DLTS), photo induced current transient spectroscopy (PICTS) and thermally stimulated current spectroscopy (TSC). Both DLTS results of annealed semiconducting InP and PICTS and TSC results of annealed semi-insulating InP indicate that InP annealed in phosphorus ambient has five defects, while lid? annealed in iron phospbide ambient has two defects. Such a defect formation phenomenon is explained in terms of defect suppression by the iron atom diffusion process. The correlation of the defects and the nature of the defects in annealed InP are discussed based on the results.
DOI10.1051/epjap:2004096
Indexed BySCI
Language英语
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
WOS IDWOS:000224559500033
PublisherE D P SCIENCES
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/82389
Corresponding AuthorZhao, YW
Affiliation1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
2.Hebei Semicond Res Inst, Shijiazhuang 050051, Hebei, Peoples R China
Recommended Citation
GB/T 7714
Zhao, YW,Dong, ZY,Duan, ML,et al. Annealing ambient controlled deep defect formation in InP[J]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,2004,27(1-3):167-169.
APA Zhao, YW.,Dong, ZY.,Duan, ML.,Sun, WR.,Zeng, YP.,...&Sun, TN.(2004).Annealing ambient controlled deep defect formation in InP.EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,27(1-3),167-169.
MLA Zhao, YW,et al."Annealing ambient controlled deep defect formation in InP".EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS 27.1-3(2004):167-169.
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