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Chemical vapor deposition of layered two-dimensional MoSi2N4 materials | |
Hong, Yi-Lun; Liu, Zhibo; Wang, Lei; Zhou, Tianya; Ma, Wei; Xu, Chuan; Feng, Shun; Chen, Long; Chen, Mao-Lin; Sun, Dong-Ming; Chen, Xing-Qiu; Cheng, Hui-Ming; Ren, Wencai | |
2020-08-07 | |
Source Publication | SCIENCE
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Volume | 369Issue:6504Pages:670-+ |
Abstract | Identifying two-dimensional layered materials in the monolayer limit has led to discoveries of numerous new phenomena and unusual properties. We introduced elemental silicon during chemical vapor deposition growth of nonlayered molybdenum nitride to passivate its surface, which enabled the growth of centimeter-scale monolayer films of MoSi2N4. This monolayer was built up by septuple atomic layers of N-Si-N-Mo-N-Si-N, which can be viewed as a MoN2 layer sandwiched between two Si-N bilayers. This material exhibited semiconducting behavior (bandgap similar to 1.94 electron volts), high strength (similar to 66 gigapascals), and excellent ambient stability. Density functional theory calculations predict a large family of such monolayer structured two-dimensional layered materials, including semiconductors, metals, and magnetic half-metals. |
DOI | 10.1126/science.abb7023 |
WOS ID | WOS:000559184400041 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.imr.ac.cn/handle/321006/82636 |
Collection | 中国科学院金属研究所 |
Recommended Citation GB/T 7714 | Hong, Yi-Lun,Liu, Zhibo,Wang, Lei,et al. Chemical vapor deposition of layered two-dimensional MoSi2N4 materials[J]. SCIENCE,2020,369(6504):670-+. |
APA | Hong, Yi-Lun.,Liu, Zhibo.,Wang, Lei.,Zhou, Tianya.,Ma, Wei.,...&Ren, Wencai.(2020).Chemical vapor deposition of layered two-dimensional MoSi2N4 materials.SCIENCE,369(6504),670-+. |
MLA | Hong, Yi-Lun,et al."Chemical vapor deposition of layered two-dimensional MoSi2N4 materials".SCIENCE 369.6504(2020):670-+. |
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