Chemical vapor deposition of layered two-dimensional MoSi2N4 materials

doi:10.1126/science.abb7023

IMR OpenIR

	Chemical vapor deposition of layered two-dimensional MoSi2N4 materials
	Hong, Yi-Lun; Liu, Zhibo; Wang, Lei; Zhou, Tianya; Ma, Wei; Xu, Chuan; Feng, Shun; Chen, Long; Chen, Mao-Lin; Sun, Dong-Ming; Chen, Xing-Qiu; Cheng, Hui-Ming; Ren, Wencai
	2020-08-07
Source Publication	SCIENCE
Volume	369 Issue:6504 Pages:670-+
Abstract	Identifying two-dimensional layered materials in the monolayer limit has led to discoveries of numerous new phenomena and unusual properties. We introduced elemental silicon during chemical vapor deposition growth of nonlayered molybdenum nitride to passivate its surface, which enabled the growth of centimeter-scale monolayer films of MoSi2N4. This monolayer was built up by septuple atomic layers of N-Si-N-Mo-N-Si-N, which can be viewed as a MoN2 layer sandwiched between two Si-N bilayers. This material exhibited semiconducting behavior (bandgap similar to 1.94 electron volts), high strength (similar to 66 gigapascals), and excellent ambient stability. Density functional theory calculations predict a large family of such monolayer structured two-dimensional layered materials, including semiconductors, metals, and magnetic half-metals.
DOI	10.1126/science.abb7023
WOS ID	WOS:000559184400041
Citation statistics
Document Type	期刊论文
Identifier	http://ir.imr.ac.cn/handle/321006/82636
Collection	中国科学院金属研究所
Recommended Citation GB/T 7714	Hong, Yi-Lun,Liu, Zhibo,Wang, Lei,et al. Chemical vapor deposition of layered two-dimensional MoSi2N4 materials[J]. SCIENCE,2020,369(6504):670-+.
APA	Hong, Yi-Lun.,Liu, Zhibo.,Wang, Lei.,Zhou, Tianya.,Ma, Wei.,...&Ren, Wencai.(2020).Chemical vapor deposition of layered two-dimensional MoSi2N4 materials.SCIENCE,369(6504),670-+.
MLA	Hong, Yi-Lun,et al."Chemical vapor deposition of layered two-dimensional MoSi2N4 materials".SCIENCE 369.6504(2020):670-+.

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