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Chemical vapor deposition of layered two-dimensional MoSi2N4 materials
Hong, Yi-Lun; Liu, Zhibo; Wang, Lei; Zhou, Tianya; Ma, Wei; Xu, Chuan; Feng, Shun; Chen, Long; Chen, Mao-Lin; Sun, Dong-Ming; Chen, Xing-Qiu; Cheng, Hui-Ming; Ren, Wencai
2020-08-07
Source PublicationSCIENCE
Volume369Issue:6504Pages:670-+
AbstractIdentifying two-dimensional layered materials in the monolayer limit has led to discoveries of numerous new phenomena and unusual properties. We introduced elemental silicon during chemical vapor deposition growth of nonlayered molybdenum nitride to passivate its surface, which enabled the growth of centimeter-scale monolayer films of MoSi2N4. This monolayer was built up by septuple atomic layers of N-Si-N-Mo-N-Si-N, which can be viewed as a MoN2 layer sandwiched between two Si-N bilayers. This material exhibited semiconducting behavior (bandgap similar to 1.94 electron volts), high strength (similar to 66 gigapascals), and excellent ambient stability. Density functional theory calculations predict a large family of such monolayer structured two-dimensional layered materials, including semiconductors, metals, and magnetic half-metals.
DOI10.1126/science.abb7023
WOS IDWOS:000559184400041
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Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/82636
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
Hong, Yi-Lun,Liu, Zhibo,Wang, Lei,et al. Chemical vapor deposition of layered two-dimensional MoSi2N4 materials[J]. SCIENCE,2020,369(6504):670-+.
APA Hong, Yi-Lun.,Liu, Zhibo.,Wang, Lei.,Zhou, Tianya.,Ma, Wei.,...&Ren, Wencai.(2020).Chemical vapor deposition of layered two-dimensional MoSi2N4 materials.SCIENCE,369(6504),670-+.
MLA Hong, Yi-Lun,et al."Chemical vapor deposition of layered two-dimensional MoSi2N4 materials".SCIENCE 369.6504(2020):670-+.
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