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Two-stage Hall-Petch relationship in Cu with recrystallized structure
Tian, Y. Z.; Ren, Y. P.; Gao, S.; Zheng, R. X.; Wang, J. H.; Pan, H. C.; Zhang, Z. F.; Tsuji, N.; Qin, G. W.
2020-07-01
Source PublicationJOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
Volume48Pages:31-35
AbstractAlthough Cu was studied extensively, the Hall-Petch relationship was mainly reported in the coarse-grained regime. In this work, fully recrystallized Cu specimens with a wide grain size regime of 0.51-14.93 mu m manifest a two-stage Hall-Petch relationship. There is a critical grain size of 3 mu m that divides stages I and II where the Hall-Petch slope k value are quite different. The stage II is supposed to be validified down to 100 nm at least by comparing with a Cu-Ag alloy. The critical grain size varies in different materials systems, and the underline mechanisms are discussed based on the dislocation glide modes. (C) 2020 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
DOI10.1016/j.jmst.2019.12.023
WOS IDWOS:000534323200005
Citation statistics
Cited Times:4[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/82714
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
Tian, Y. Z.,Ren, Y. P.,Gao, S.,et al. Two-stage Hall-Petch relationship in Cu with recrystallized structure[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2020,48:31-35.
APA Tian, Y. Z..,Ren, Y. P..,Gao, S..,Zheng, R. X..,Wang, J. H..,...&Qin, G. W..(2020).Two-stage Hall-Petch relationship in Cu with recrystallized structure.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,48,31-35.
MLA Tian, Y. Z.,et al."Two-stage Hall-Petch relationship in Cu with recrystallized structure".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 48(2020):31-35.
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