An interface kinetics study of oxidation process of silicon

doi:10.1080/10584580500413806

IMR OpenIR

	An interface kinetics study of oxidation process of silicon
	Fang, F ; Ha, MJ ; Qiu, XY ; Liu, JM
通讯作者	Liu, JM(liujm@nju.edu.cn)
	2005
发表期刊	INTEGRATED FERROELECTRICS
ISSN	1058-4587
卷号	74 页码:31-43
摘要	As well demonstrated in the Deal-Grove general model for thermal oxidation kinetics of silicon, a deviation from experiments on short-time oxidation regime is existed. Further study on the interface configuration and growth kinetics of oxidation process of silicon is performed. Various isotopic labeling experiments allow us to argue that this region of an "anomalously high rate near Si-SiO 2 interface represents a transition region between Si and fully oxidized SiO 2 layer, which may be viewed as an incompletely oxidized layer. We accordingly present a phenomenological improved Deal-Grove model. The calculated results fit much better than the Deal-Grove model prediction with the measured oxidation thickness for both dry- and wet-oxidation experiments.
关键词	oxidation kinetics transition region modeling
DOI	10.1080/10584580500413806
收录类别	SCI
语种	英语
WOS研究方向	Engineering ; Physics
WOS类目	Engineering, Electrical & Electronic ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000234231700005
出版者	TAYLOR & FRANCIS LTD
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/82736
通讯作者	Liu, JM
作者单位	1.Nanjing Univ, Nanjing Natl Lab Microstruct, Nanjing 210093, Peoples R China 2.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang, Peoples R China
推荐引用方式 GB/T 7714	Fang, F,Ha, MJ,Qiu, XY,et al. An interface kinetics study of oxidation process of silicon[J]. INTEGRATED FERROELECTRICS,2005,74:31-43.
APA	Fang, F,Ha, MJ,Qiu, XY,&Liu, JM.(2005).An interface kinetics study of oxidation process of silicon.INTEGRATED FERROELECTRICS,74,31-43.
MLA	Fang, F,et al."An interface kinetics study of oxidation process of silicon".INTEGRATED FERROELECTRICS 74(2005):31-43.