X-ray photoelectron spectroscopy studies of TixAl1-xN thin films prepared by RF reactive magnetron sputtering

IMR OpenIR

	X-ray photoelectron spectroscopy studies of TixAl1-xN thin films prepared by RF reactive magnetron sputtering
	Xiong, R ; Shi, J
通讯作者	Xiong, R(xiongrui@whu.edu.cn)
	2005-07-01
发表期刊	JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN	1005-0302
卷号	21 期号:4 页码:541-544
摘要	TixAl1-xN films have been prepared by RF reactive magnetron sputtering. X-ray diffraction results showed that TixAl1-xN thin films in this study were hexagonal wurtzite structure with the Ti content up to 0.18. X-ray photoelectron spectrocopy studies provided that the N1s core-electron spectrum of TixAl1-xN thin film brodend with increasing Ti content, and the difference of the chemical shifts for Ti2p(3/2) line between TiN and TixAl1-xN thin film was 0.7 eV.
关键词	TixAl1-xN films X-ray photoelectron spectroscopy core-electron spectrum
收录类别	SCI
语种	英语
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:000230978600022
出版者	JOURNAL MATER SCI TECHNOL
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/82766
通讯作者	Xiong, R
作者单位	1.Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China 2.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Xiong, R,Shi, J. X-ray photoelectron spectroscopy studies of TixAl1-xN thin films prepared by RF reactive magnetron sputtering[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2005,21(4):541-544.
APA	Xiong, R,&Shi, J.(2005).X-ray photoelectron spectroscopy studies of TixAl1-xN thin films prepared by RF reactive magnetron sputtering.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,21(4),541-544.
MLA	Xiong, R,et al."X-ray photoelectron spectroscopy studies of TixAl1-xN thin films prepared by RF reactive magnetron sputtering".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 21.4(2005):541-544.