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Vertically Oriented Topological Insulator Bi2Se3 Nanoplates on Silicon for Broadband Photodetection
Li, Mingze; Wang, Zhenhua; Gao, Xuan P. A.; Zhang, Zhidong
2020-05-07
Source PublicationJOURNAL OF PHYSICAL CHEMISTRY C
Volume124Issue:18Pages:10135-10142
AbstractAs an exotic state of quantum matter, topological insulators like Bi2Se3 have potential applications in low power electronic and optoelectronic devices. Bi2Se3 nanoflakes or films with (001) orientation, laying horizontally on substrates, have been studied extensively in the past few years. Here we report the growth and photodetection response of Bi2Se3 nanoplates oriented vertically on the p-type Si substrate. This unconventional structure and geometry provide a higher effective absorption length for light absorption and potentially more efficient photocarrier transport via the topologically protected surface states or the basal plane of Bi2Se3 nanoplates. By compensating Bi2Se3 native defects with Cu doping, we achieve an increase of 42 times in the photocurrent when the Cu concentration is 3.87 at. %. Our work paves a way for exploring the excellent optoelectronic properties of topological insulator films with an unconventional orientation.
DOI10.1021/acs.jpcc.0c01978
WOS IDWOS:000535175400051
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Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/82871
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
Li, Mingze,Wang, Zhenhua,Gao, Xuan P. A.,et al. Vertically Oriented Topological Insulator Bi2Se3 Nanoplates on Silicon for Broadband Photodetection[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2020,124(18):10135-10142.
APA Li, Mingze,Wang, Zhenhua,Gao, Xuan P. A.,&Zhang, Zhidong.(2020).Vertically Oriented Topological Insulator Bi2Se3 Nanoplates on Silicon for Broadband Photodetection.JOURNAL OF PHYSICAL CHEMISTRY C,124(18),10135-10142.
MLA Li, Mingze,et al."Vertically Oriented Topological Insulator Bi2Se3 Nanoplates on Silicon for Broadband Photodetection".JOURNAL OF PHYSICAL CHEMISTRY C 124.18(2020):10135-10142.
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