Photoluminescence characteristics of InP annealed in phosphorus and iron phosphide ambiences

doi:10.1016/j.mssp.2004.10.002

IMR OpenIR

	Photoluminescence characteristics of InP annealed in phosphorus and iron phosphide ambiences
	Zhao, YW; Dong, HW; Li, JM; Ling, LY
通讯作者	Zhao, YW(zhaoyw@red.semi.ac.cn)
	2005-08-01
发表期刊	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
ISSN	1369-8001
卷号	8 期号:4 页码:531-535
摘要	Photo luminescence (PL) spectroscopy has been used to study InP annealed in phosphorus and iron phosphide ambiences. Noticeable PL emissions related with thermally induced defects have been detected in undoped InP annealed in iron phosphide ambience. Origins of the PL emissions have been discussed. (c) 2004 Elsevier Ltd. All rights reserved.
关键词	indium phosphide annealing photoluminescence
DOI	10.1016/j.mssp.2004.10.002
收录类别	SCI
语种	英语
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000229421000013
出版者	ELSEVIER SCI LTD
引用统计	被引频次：2[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/83047
专题	中国科学院金属研究所
通讯作者	Zhao, YW
作者单位	Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhao, YW,Dong, HW,Li, JM,et al. Photoluminescence characteristics of InP annealed in phosphorus and iron phosphide ambiences[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2005,8(4):531-535.
APA	Zhao, YW,Dong, HW,Li, JM,&Ling, LY.(2005).Photoluminescence characteristics of InP annealed in phosphorus and iron phosphide ambiences.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,8(4),531-535.
MLA	Zhao, YW,et al."Photoluminescence characteristics of InP annealed in phosphorus and iron phosphide ambiences".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 8.4(2005):531-535.