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An interface kinetics study of oxidation process of silicon
Fang, F; Ha, MJ; Qiu, XY; Liu, JM
Corresponding AuthorLiu, JM(liujm@nju.edu.cn)
2005
Source PublicationINTEGRATED FERROELECTRICS
ISSN1058-4587
Volume74Pages:31-43
AbstractAs well demonstrated in the Deal-Grove general model for thermal oxidation kinetics of silicon, a deviation from experiments on short-time oxidation regime is existed. Further study on the interface configuration and growth kinetics of oxidation process of silicon is performed. Various isotopic labeling experiments allow us to argue that this region of an "anomalously high rate near Si-SiO 2 interface represents a transition region between Si and fully oxidized SiO 2 layer, which may be viewed as an incompletely oxidized layer. We accordingly present a phenomenological improved Deal-Grove model. The calculated results fit much better than the Deal-Grove model prediction with the measured oxidation thickness for both dry- and wet-oxidation experiments.
Keywordoxidation kinetics transition region modeling
DOI10.1080/10584580500413806
Indexed BySCI
Language英语
WOS Research AreaEngineering ; Physics
WOS SubjectEngineering, Electrical & Electronic ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000234231700005
PublisherTAYLOR & FRANCIS LTD
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/83099
Corresponding AuthorLiu, JM
Affiliation1.Nanjing Univ, Nanjing Natl Lab Microstruct, Nanjing 210093, Peoples R China
2.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang, Peoples R China
Recommended Citation
GB/T 7714
Fang, F,Ha, MJ,Qiu, XY,et al. An interface kinetics study of oxidation process of silicon[J]. INTEGRATED FERROELECTRICS,2005,74:31-43.
APA Fang, F,Ha, MJ,Qiu, XY,&Liu, JM.(2005).An interface kinetics study of oxidation process of silicon.INTEGRATED FERROELECTRICS,74,31-43.
MLA Fang, F,et al."An interface kinetics study of oxidation process of silicon".INTEGRATED FERROELECTRICS 74(2005):31-43.
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