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An interface kinetics study of oxidation process of silicon
Fang, F; Ha, MJ; Qiu, XY; Liu, JM
通讯作者Liu, JM(liujm@nju.edu.cn)
2005
发表期刊INTEGRATED FERROELECTRICS
ISSN1058-4587
卷号74页码:31-43
摘要As well demonstrated in the Deal-Grove general model for thermal oxidation kinetics of silicon, a deviation from experiments on short-time oxidation regime is existed. Further study on the interface configuration and growth kinetics of oxidation process of silicon is performed. Various isotopic labeling experiments allow us to argue that this region of an "anomalously high rate near Si-SiO 2 interface represents a transition region between Si and fully oxidized SiO 2 layer, which may be viewed as an incompletely oxidized layer. We accordingly present a phenomenological improved Deal-Grove model. The calculated results fit much better than the Deal-Grove model prediction with the measured oxidation thickness for both dry- and wet-oxidation experiments.
关键词oxidation kinetics transition region modeling
DOI10.1080/10584580500413806
收录类别SCI
语种英语
WOS研究方向Engineering ; Physics
WOS类目Engineering, Electrical & Electronic ; Physics, Applied ; Physics, Condensed Matter
WOS记录号WOS:000234231700005
出版者TAYLOR & FRANCIS LTD
引用统计
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/83099
通讯作者Liu, JM
作者单位1.Nanjing Univ, Nanjing Natl Lab Microstruct, Nanjing 210093, Peoples R China
2.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang, Peoples R China
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Fang, F,Ha, MJ,Qiu, XY,et al. An interface kinetics study of oxidation process of silicon[J]. INTEGRATED FERROELECTRICS,2005,74:31-43.
APA Fang, F,Ha, MJ,Qiu, XY,&Liu, JM.(2005).An interface kinetics study of oxidation process of silicon.INTEGRATED FERROELECTRICS,74,31-43.
MLA Fang, F,et al."An interface kinetics study of oxidation process of silicon".INTEGRATED FERROELECTRICS 74(2005):31-43.
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