| An interface kinetics study of oxidation process of silicon | |
| Fang, F; Ha, MJ; Qiu, XY; Liu, JM | |
| Corresponding Author | Liu, JM(liujm@nju.edu.cn) |
| 2005 | |
| Source Publication | INTEGRATED FERROELECTRICS
 |
| ISSN | 1058-4587 |
| Volume | 74Pages:31-43 |
| Abstract | As well demonstrated in the Deal-Grove general model for thermal oxidation kinetics of silicon, a deviation from experiments on short-time oxidation regime is existed. Further study on the interface configuration and growth kinetics of oxidation process of silicon is performed. Various isotopic labeling experiments allow us to argue that this region of an "anomalously high rate near Si-SiO 2 interface represents a transition region between Si and fully oxidized SiO 2 layer, which may be viewed as an incompletely oxidized layer. We accordingly present a phenomenological improved Deal-Grove model. The calculated results fit much better than the Deal-Grove model prediction with the measured oxidation thickness for both dry- and wet-oxidation experiments. |
| Keyword | oxidation kinetics transition region modeling |
| DOI | 10.1080/10584580500413806 |
| Indexed By | SCI |
| Language | 英语 |
| WOS Research Area | Engineering ; Physics |
| WOS Subject | Engineering, Electrical & Electronic ; Physics, Applied ; Physics, Condensed Matter |
| WOS ID | WOS:000234231700005 |
| Publisher | TAYLOR & FRANCIS LTD |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/83099 |
| Corresponding Author | Liu, JM |
| Affiliation | 1.Nanjing Univ, Nanjing Natl Lab Microstruct, Nanjing 210093, Peoples R China 2.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang, Peoples R China |
| Recommended Citation GB/T 7714 | Fang, F,Ha, MJ,Qiu, XY,et al. An interface kinetics study of oxidation process of silicon[J]. INTEGRATED FERROELECTRICS,2005,74:31-43. |
| APA | Fang, F,Ha, MJ,Qiu, XY,&Liu, JM.(2005).An interface kinetics study of oxidation process of silicon.INTEGRATED FERROELECTRICS,74,31-43. |
| MLA | Fang, F,et al."An interface kinetics study of oxidation process of silicon".INTEGRATED FERROELECTRICS 74(2005):31-43. |
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