A Flexible Carbon Nanotube Sen-Memory Device
Qu, Ting-Yu; Sun, Yun; Chen, Mao-Lin; Liu, Zhi-Bo; Zhu, Qian-Bing; Wang, Bing-Wei; Zhao, Tian-Yang; Liu, Chi; Tan, Jun; Qiu, Song; Li, Qing-Wen; Han, Zheng; Wang, Wei; Cheng, Hui-Ming; Sun, Dong-Ming
AbstractIn a modern electronics system, charge-coupled devices and data storage devices are the two most indispensable components. Although there has been rapid and independent progress in their development during the last three decades, a cofunctionality of both sensing and memory at single-unit level is yet premature for flexible electronics. For wearable electronics that work in ultralow power conditions and involve strains, conventional sensing-and-memory systems suffer from low sensitivity and are not able to directly transform sensed information into sufficient memory. Here, a new transformative device is demonstrated, which is called "sen-memory", that exhibits the dual functionality of sensing and memory in a monolithic integrated circuit. The active channel of the device is formed by a carbon nanotube thin film and the floating gate is formed by a controllably oxidized aluminum nanoparticle array for electrical- and optical-programming. The device exhibits a high on-off current ratio of approximate to 10(6), a long-term retention of approximate to 10(8) s, and durable flexibility at a bending strain of 0.4%. It is shown that the device senses a photogenerated pattern in seconds at zero bias and memorizes an image for a couple of years.
WOS IDWOS:000509008300001
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Qu, Ting-Yu,Sun, Yun,Chen, Mao-Lin,et al. A Flexible Carbon Nanotube Sen-Memory Device[J]. ADVANCED MATERIALS,2020,32(9).
APA Qu, Ting-Yu.,Sun, Yun.,Chen, Mao-Lin.,Liu, Zhi-Bo.,Zhu, Qian-Bing.,...&Sun, Dong-Ming.(2020).A Flexible Carbon Nanotube Sen-Memory Device.ADVANCED MATERIALS,32(9).
MLA Qu, Ting-Yu,et al."A Flexible Carbon Nanotube Sen-Memory Device".ADVANCED MATERIALS 32.9(2020).
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