In situ doping control for growth of n-p-n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy

doi:10.1016/j.jcrysgro.2004.09.057

IMR OpenIR

	In situ doping control for growth of n-p-n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy
	Gao, F ; Huang, DD ; Li, JP ; Liu, C
通讯作者	Gao, F(feigao@snnu.edu.cn)
	2005-01-03
发表期刊	JOURNAL OF CRYSTAL GROWTH
ISSN	0022-0248
卷号	273 期号:3-4 页码:381-385
摘要	N-p-n Si/SiGe/Si heterostructures have been grown by a disilane (Si2H6) gas and Ge solid sources molecular beam epitaxy system using phosphine (PH3) and diborane (B2H6) as n- and p-type in situ doping sources, respectively. Adopting an in situ doping control technology, the influence of background B dopant on the growth of n-Si emitter layer was reduced, and an abrupt B dopant distribution from SiGe base to Si emitter layer was obtained. Besides, higher n-type doping in the surface region of emitter to reduce the emitter resist can be realized, and it did not result in the drop of growth rate of Si emitter layer in this technology. (C) 2004 Elsevier B.V. All rights reserved.
关键词	doping molecular beam epitaxy germanium silicon alloys semiconducting germanium semiconducting silicon bipolar transistors
DOI	10.1016/j.jcrysgro.2004.09.057
收录类别	SCI
语种	英语
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000226243100008
出版者	ELSEVIER SCIENCE BV
引用统计	被引频次：2[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/84695
专题	中国科学院金属研究所
通讯作者	Gao, F
作者单位	1.Shaanxi Normal Univ, Coll Phys & Informat Technol, Xian 710062, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Gao, F,Huang, DD,Li, JP,et al. In situ doping control for growth of n-p-n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2005,273(3-4):381-385.
APA	Gao, F,Huang, DD,Li, JP,&Liu, C.(2005).In situ doping control for growth of n-p-n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,273(3-4),381-385.
MLA	Gao, F,et al."In situ doping control for growth of n-p-n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 273.3-4(2005):381-385.