Preparation and properties of ZnO : Al (ZAO) thin films deposited by DC reactive magnetron sputtering

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	Preparation and properties of ZnO : Al (ZAO) thin films deposited by DC reactive magnetron sputtering
	Pei, ZL; Zhang, XB; Wang, TG; Gong, J; Sun, C; Wen, LS
通讯作者	Pei, ZL(zlpei@imr.ac.cn)
	2005
发表期刊	ACTA METALLURGICA SINICA
ISSN	0412-1961
卷号	41 期号:1 页码:84-88
摘要	Al-doped ZnO(ZAO) layers have been prepared by reactive DC magnetron sputtering from Zn:2.0%Al (mass fraction) alloy target on glass and silicon wafer substrates. The influences of the deposition parameters on the crystallization behavior as well as electrical and optical properties of ZAO films have been investigated. The crystallinity of the films was improved and the columnar crystalline growth became dominant as the substrate temperature increased. All the films show a compressive stress, which increased as the DC power increased, while it decreased as the substrate temperature was raised. Optical transmittance up to 80% in the visible range and electrical resistivity as low as 3 x 10(-4) - 4 x 10(-4) Omega (.) cm were obtained under optimal deposition conditions.
关键词	DC reactive magnetron sputtering ZAO film growth mechanism electrical and optical propertie
收录类别	SCI
语种	英语
WOS研究方向	Metallurgy & Metallurgical Engineering
WOS类目	Metallurgy & Metallurgical Engineering
WOS记录号	WOS:000227020500016
出版者	SCIENCE PRESS
引用统计	被引频次：8[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/85154
专题	中国科学院金属研究所
通讯作者	Pei, ZL
作者单位	Chinese Acad Sci, Met Res Inst, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Pei, ZL,Zhang, XB,Wang, TG,et al. Preparation and properties of ZnO : Al (ZAO) thin films deposited by DC reactive magnetron sputtering[J]. ACTA METALLURGICA SINICA,2005,41(1):84-88.
APA	Pei, ZL,Zhang, XB,Wang, TG,Gong, J,Sun, C,&Wen, LS.(2005).Preparation and properties of ZnO : Al (ZAO) thin films deposited by DC reactive magnetron sputtering.ACTA METALLURGICA SINICA,41(1),84-88.
MLA	Pei, ZL,et al."Preparation and properties of ZnO : Al (ZAO) thin films deposited by DC reactive magnetron sputtering".ACTA METALLURGICA SINICA 41.1(2005):84-88.