| Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature |
| Zhang, Y; Zeng, YP; Ma, L; Wang, BQ; Zhu, ZP; Wang, LC; Yang, FH
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| 通讯作者 | Zhang, Y()
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| 2006-06-01
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| 发表期刊 | CHINESE PHYSICS
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| ISSN | 1009-1963
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| 卷号 | 15期号:6页码:1335-1338 |
| 摘要 | This paper reports that lnAs/In0.53Ga0.47As/AlAs resonant tunnelling diodes have been grown on InP substrates by molecular beam epitaxy. Peak to valley current ratio of these devices is 17 at 300K. A peak current density of 3kA/cm(2) has been obtained for diodes with AlAs barriers of ten monolayers, and an In0.53Ga0.47As well of eight monolayers with four monolayers of InAs insert layer. The effects of growth interruption for smoothing potential barrier interfaces have been investigated by high resolution transmission electron microscope. |
| 关键词 | resonant tunnelling diode
InP substrate
molecular beam epitaxy
high resolution transmission electron microscope
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| 收录类别 | SCI
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| 语种 | 英语
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| WOS研究方向 | Physics
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| WOS类目 | Physics, Multidisciplinary
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| WOS记录号 | WOS:000238210900034
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| 出版者 | IOP PUBLISHING LTD
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| 引用统计 |
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| 文献类型 | 期刊论文
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| 条目标识符 | http://ir.imr.ac.cn/handle/321006/88995
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| 专题 | 中国科学院金属研究所
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| 通讯作者 | Zhang, Y |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
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推荐引用方式
GB/T 7714 |
Zhang, Y,Zeng, YP,Ma, L,et al. Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature[J]. CHINESE PHYSICS,2006,15(6):1335-1338.
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| APA |
Zhang, Y.,Zeng, YP.,Ma, L.,Wang, BQ.,Zhu, ZP.,...&Yang, FH.(2006).Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature.CHINESE PHYSICS,15(6),1335-1338.
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| MLA |
Zhang, Y,et al."Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature".CHINESE PHYSICS 15.6(2006):1335-1338.
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