Growth of GaN single crystals by Ca3N2 flux
Wang, G.1; Yuan, W. X.2; Jian, J. K.3; Bao, H. Q.1; Wang, J. F.2; Chen, X. L.1; Liang, J. K.1,4
Corresponding AuthorChen, X. L.(
AbstractThis paper reports recent progress on GaN single crystal growth by Ca3N2 flux. The isothermal phase diagrams of the Ca-Ga-N system were predicted from the corresponding binary systems by CALPHAD. Well-crystallized GaN crystals up to 1.5 mm were grown from the Ca-Ga-N system at 900 degrees C under 0.2 MPa N-2 pressure. It was found that the crystal size depended on the molar ratio of starting materials, the temperature and the duration of growth. A growth mechanism involving two-step reactions is proposed. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
KeywordCALPHAD single crystal growth nitride
Indexed BySCI
WOS Research AreaScience & Technology - Other Topics ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS IDWOS:000251806500020
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Cited Times:5[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Corresponding AuthorChen, X. L.
Affiliation1.Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
2.Univ Sci & Technol Beijing, Dept Chem, Sch Appl Sci, Beijing 100083, Peoples R China
3.Xinjiang Univ, Dept Phys, Urumqi 830046, Peoples R China
4.Acad Sinica, Int Ctr Mat Phys, Shenyang 110016, Peoples R China
Recommended Citation
GB/T 7714
Wang, G.,Yuan, W. X.,Jian, J. K.,et al. Growth of GaN single crystals by Ca3N2 flux[J]. SCRIPTA MATERIALIA,2008,58(4):319-322.
APA Wang, G..,Yuan, W. X..,Jian, J. K..,Bao, H. Q..,Wang, J. F..,...&Liang, J. K..(2008).Growth of GaN single crystals by Ca3N2 flux.SCRIPTA MATERIALIA,58(4),319-322.
MLA Wang, G.,et al."Growth of GaN single crystals by Ca3N2 flux".SCRIPTA MATERIALIA 58.4(2008):319-322.
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