Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy

doi:10.1016/j.mejo.2008.03.002

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	Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy
	Cui, J. P.; Duan, Y.; Wang, X. F.; Zeng, Y. P.
通讯作者	Cui, J. P.(jpcui@semi.ac.cn)
	2008-12-01
发表期刊	MICROELECTRONICS JOURNAL
ISSN	0026-2692
卷号	39 期号:12 页码:1542-1544
摘要	ZnO film of 8 mu m thickness was grown on a sapphire (0 0 1) substrate with a GaN buffer layer by a novel growth technique called metal-source vapor phase epitaxy (MVPE). The surface of ZnO film measured by scanning electron microscope (SEM) is smooth and shows many regular hexagonal features. The full width at half maximum (FWHM) of ZnO(0 0 2) and (1 0 2) omega-scan rocking curves are 119 and 202 arcsec, corresponding a high crystal quality. The status of the strain in ZnO thick film was particularly analyzed by X-ray diffraction (XRD) omega-20 scanning. The results show that the strain in ZnO film is compressive, which is also supported by Raman scattering spectroscopy. The compressive strain can solve the cracking problem in the quick growth of ZnO thick film. (c) 2008 Elsevier Ltd. All rights reserved.
关键词	ZnO film Strain status GaN buffer layer Sapphire MVPE
DOI	10.1016/j.mejo.2008.03.002
收录类别	SCI
语种	英语
WOS研究方向	Engineering ; Science & Technology - Other Topics
WOS类目	Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology
WOS记录号	WOS:000261647800028
出版者	ELSEVIER SCI LTD
引用统计	被引频次：13[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/94053
专题	中国科学院金属研究所
通讯作者	Cui, J. P.
作者单位	Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Cui, J. P.,Duan, Y.,Wang, X. F.,et al. Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy[J]. MICROELECTRONICS JOURNAL,2008,39(12):1542-1544.
APA	Cui, J. P.,Duan, Y.,Wang, X. F.,&Zeng, Y. P..(2008).Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy.MICROELECTRONICS JOURNAL,39(12),1542-1544.
MLA	Cui, J. P.,et al."Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy".MICROELECTRONICS JOURNAL 39.12(2008):1542-1544.