IMR OpenIR
Effect of CO on characteristics of AlGaN/GaN Schottky diode
Feng Chun1; Wang Xiao-Liang; Yang Cui-Bai; Xiao Hong-Ling; Zhang Ming-Lan; Jiang Li-Juan; Tang Jian; Hu Guo-Xin; Wang Jun-Xi; Wang Zhan-Guo
Corresponding AuthorFeng Chun(cfeng@semi.ac.cn)
2008-08-01
Source PublicationCHINESE PHYSICS LETTERS
ISSN0256-307X
Volume25Issue:8Pages:3025-3027
AbstractPt Schottky diode gas sensors for CO are fabricated using AlGaN/ GaN high electron mobility transistor ( HEMTs) structure. The diodes show a remarkable sensor signal (3 mA, in N(2); 2mA in air ambient) biased 2V after 1% CO is introduced at 50 degrees C. The Schottky barrier heights decrease for 36meV and 27meV in the two cases respectively. The devices exhibit a slow recovery characteristic in air ambient but almost none in the background of pure N2, which reveals that oxygen molecules could accelerate the desorption of CO and offer restrictions to CO detection.
Indexed BySCI
Language英语
WOS Research AreaPhysics
WOS SubjectPhysics, Multidisciplinary
WOS IDWOS:000258018300078
PublisherIOP PUBLISHING LTD
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/94470
Collection中国科学院金属研究所
Corresponding AuthorFeng Chun
Affiliation1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Feng Chun,Wang Xiao-Liang,Yang Cui-Bai,et al. Effect of CO on characteristics of AlGaN/GaN Schottky diode[J]. CHINESE PHYSICS LETTERS,2008,25(8):3025-3027.
APA Feng Chun.,Wang Xiao-Liang.,Yang Cui-Bai.,Xiao Hong-Ling.,Zhang Ming-Lan.,...&Wang Zhan-Guo.(2008).Effect of CO on characteristics of AlGaN/GaN Schottky diode.CHINESE PHYSICS LETTERS,25(8),3025-3027.
MLA Feng Chun,et al."Effect of CO on characteristics of AlGaN/GaN Schottky diode".CHINESE PHYSICS LETTERS 25.8(2008):3025-3027.
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