Growth mechanisms of Cu3Sn on polycrystalline and single crystalline Cu substrates

doi:10.1016/j.actamat.2009.06.025

IMR OpenIR

	Growth mechanisms of Cu3Sn on polycrystalline and single crystalline Cu substrates
	Shang, P. J.1; Liu, Z. Q.1; Pang, X. Y.1; Li, D. X.1; Shang, J. K.1,2
通讯作者	Liu, Z. Q.(zqliu@imr.ac.cn)
	2009-09-01
发表期刊	ACTA MATERIALIA
ISSN	1359-6454
卷号	57 期号:16 页码:4697-4706
摘要	A comprehensive transmission electron microscopy (TEM) study was conducted to investigate the growth mechanisms Of Cu3Sn on polycrystalline and single crystalline Cu substrates in solder joints. On single crystalline Cu the solder reflow process resulted in the growth of columnar Cu3Sn grains aligned in a thin uniform layer perpendicular to the interface, while a thick Cu3Sn layer formed from fine equiaxed grains on the polycrystalline substrate. In the subsequent solid state aging, columnar growth Of Cu3Sn continued on the single crystalline Cu before it was replaced by nucleation and growth of new triangular Cu3Sn grains at the triple junction sites of the Cu/Cu3Sn interface. On the polycrystalline Cu the solid state aging caused much more rapid growth of the Cu3Sn layer due to nucleation and the growth of new Cu3Sn grains at both the Cu/Cu3Sn and Cu6Sn5/Cu3Sn interfaces. These different growth behaviors Of Cu3Sn were related to the diffusive supply of reactive elements. (C) 2009 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
关键词	Cu3Sn Growth mechanism Interface Soldering Transmission electron microscopy
资助者	National Basic Research Program of China ; National Natural Science Foundation of China ; Chinese Academy of Sciences
DOI	10.1016/j.actamat.2009.06.025
收录类别	SCI
语种	英语
资助项目	National Basic Research Program of China[2004CB619306] ; National Natural Science Foundation of China ; Chinese Academy of Sciences
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:000270163900006
出版者	PERGAMON-ELSEVIER SCIENCE LTD
引用统计	被引频次：115[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/96135
专题	中国科学院金属研究所
通讯作者	Liu, Z. Q.
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
推荐引用方式 GB/T 7714	Shang, P. J.,Liu, Z. Q.,Pang, X. Y.,et al. Growth mechanisms of Cu3Sn on polycrystalline and single crystalline Cu substrates[J]. ACTA MATERIALIA,2009,57(16):4697-4706.
APA	Shang, P. J.,Liu, Z. Q.,Pang, X. Y.,Li, D. X.,&Shang, J. K..(2009).Growth mechanisms of Cu3Sn on polycrystalline and single crystalline Cu substrates.ACTA MATERIALIA,57(16),4697-4706.
MLA	Shang, P. J.,et al."Growth mechanisms of Cu3Sn on polycrystalline and single crystalline Cu substrates".ACTA MATERIALIA 57.16(2009):4697-4706.