Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer

doi:10.1016/j.mssp.2009.12.003

IMR OpenIR

	Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer
	Zhao, Jie 1,2; Hu, Lizhong 2
通讯作者	Zhao, Jie(jiezhao_sub@163.com)
	2009-12-01
发表期刊	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
ISSN	1369-8001
卷号	12 期号:6 页码:233-237
摘要	ZnO thin films without and with a homo-buffer layer have been prepared on Si(1 1 1) substrates by pulsed laser deposition (PLO) under various conditions. Photoluminescence (PL) measurement indicates that the optical quality of ZnO thin film is dramatically improved by introducing oxygen into the growth chamber. The sample deposited at 60 Pa possesses the best optical properties among the oxygen pressure range studied. X-ray diffraction (XRD) results show that the films directly deposited on Si are of polycrystalline ZnO structures. A low-temperature (500 degrees C) deposited ZnO buffer layer was used to enhance the crystal quality of the ZnO film. Compared to the film without the buffer layer, the film with the buffer layer exhibits aligned spotty reflection high-energy electron diffraction (RHEED) pattern and stronger near-band-edge emission (NBE) with a smaller full-width at half-maximum (FWHM) of 98 meV. The structural properties of ZnO buffer layers grown at different temperatures were investigated by RHEED patterns. It is suggested that the present characteristics of the ZnO epilayer may be raised further by elevating the growth temperature of buffer layer to 600 degrees C. (C) 2009 Elsevier Ltd. All rights reserved.
关键词	ZnO Pulsed laser deposition X-ray diffraction Photoluminescence Reflection high-energy electron diffraction
资助者	National Natural Science Foundation of China ; Education Department of Liaoning Province
DOI	10.1016/j.mssp.2009.12.003
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[60777009] ; Education Department of Liaoning Province[20060131]
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000288520200005
出版者	ELSEVIER SCI LTD
引用统计	被引频次：4[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/96170
专题	中国科学院金属研究所
通讯作者	Zhao, Jie
作者单位	1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China
推荐引用方式 GB/T 7714	Zhao, Jie,Hu, Lizhong. Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2009,12(6):233-237.
APA	Zhao, Jie,&Hu, Lizhong.(2009).Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,12(6),233-237.
MLA	Zhao, Jie,et al."Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 12.6(2009):233-237.