| The mechanism of periodic layer formation during solid-state reaction between Mg and SiO2 | |
| Chen, Y. C.1; Xu, J.2; Fan, X. H.3; Zhang, X. F.1; Han, L.1; Lin, D. Y.; Li, Q. H.; Uher, C.4 | |
| Corresponding Author | Chen, Y. C.(matscichen@hotmail.com) |
| 2009-11-01 | |
| Source Publication | INTERMETALLICS
 |
| ISSN | 0966-9795 |
| Volume | 17Issue:11Pages:920-926 |
| Abstract | The as yet unresolved microstructure of the periodic layers formed in the reactive diffusion system Mg/SiO2 was clarified by using high-resolution field-emission SEM. The periodic layered structure actually consists of the single-phase layer of Mg2Si and the two-phase layer of (Mg2Si + MgO) alternated within the reaction zone. According to the experimental observations and in line with the diffusion-induced stresses model, the mechanism controlling this phenomenon could be attributed to the stresses induced by the difference in interface growth rates of Mg2Si and MgO phases within the layer. When the elastic deformation of the slow-growing aggregated-MgO phase reaches its elastic maximum, it will be split off from the reaction front by the neighboring Mg2Si phase and a new periodic layer forms. The computer simulation results are coinciding well with the experimental data. (C) 2009 Elsevier Ltd. All rights reserved. |
| Keyword | Composites, based on the intermetallics matrix Nanostructured intermetallics Diffusion Microstructure Thermoelectric power generation |
| Funding Organization | National Science Foundation of China |
| DOI | 10.1016/j.intermet.2009.04.002 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Science Foundation of China[50601016] |
| WOS Research Area | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS Subject | Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| WOS ID | WOS:000269164600007 |
| Publisher | ELSEVIER SCI LTD |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/97182 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Chen, Y. C. |
| Affiliation | 1.Chinese Acad Sci, Inst Elect Engn, Beijing 100190, Peoples R China 2.Chinese Acad Sci, Inst Mat Res, State Key Lab Corros & Protect, Shenyang 110016, Peoples R China 3.Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Ctr Corros & Protect, Beijing 100083, Peoples R China 4.Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA |
| Recommended Citation GB/T 7714 | Chen, Y. C.,Xu, J.,Fan, X. H.,et al. The mechanism of periodic layer formation during solid-state reaction between Mg and SiO2[J]. INTERMETALLICS,2009,17(11):920-926. |
| APA | Chen, Y. C..,Xu, J..,Fan, X. H..,Zhang, X. F..,Han, L..,...&Uher, C..(2009).The mechanism of periodic layer formation during solid-state reaction between Mg and SiO2.INTERMETALLICS,17(11),920-926. |
| MLA | Chen, Y. C.,et al."The mechanism of periodic layer formation during solid-state reaction between Mg and SiO2".INTERMETALLICS 17.11(2009):920-926. |
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