An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application

doi:10.1016/j.sse.2009.01.003

IMR OpenIR

	An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application
	Wang, X. L.1,2; Chen, T. S.3; Xiao, H. L.1,2; Tang, J.1,2; Ran, J. X.1,2; Zhang, M. L.1,2; Feng, C.1,2; Hou, Q. F.1,2; Wei, M.1,2; Jiang, L. J.1,2; Li, J. M.1,2; Wang, Z. G.2
通讯作者	Wang, X. L.(xlwang@semi.ac.cn)
	2009-03-01
发表期刊	SOLID-STATE ELECTRONICS
ISSN	0038-1101
卷号	53 期号:3 页码:332-335
摘要	Optimized AlGaN/AlN/GaN high electron mobility transistor (HEMT) with high mobility GaN channel layer structures were grown on 2-in. diameter semi-insulating 6H-SiC substrates by MOCVD. The 2-in. diameter GaN HEMT wafer exhibited a low average sheet resistance of 261.9 Omega/square, with the resistance un-uniformity as low as 2.23%. Atomic force microscopy measurements revealed a smooth AlGaN surface whose root-mean-square roughness is 0.281 nm for a scan area of 5 x 5 mu m. For the single-cell HEMTs device of 2.5-mm gate width fabricated using the materials, a maximum drain current density of 1.31 A/mm, an extrinsic transconductance of 450 mS/mm, a current gain cutoff frequency of 24 GHz and a maximum frequency of oscillation 54 GHz were achieved. The four-cell internally-matched GaN HEMTs device with 10-mm total gate width demonstrated a very high output power of 45.2 W at 8 GHz under the condition of continuous-wave (CW), with a power added efficiency of 32.0% and power gain of 6.2 dB. To our best knowledge, the achieved output power of internally-matched devices are the state-of-the-art result ever reported for X-band GaN-based HEMTs. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.
关键词	AlGaN/AlN/GaN HEMT MOCVD SiC substrate Power device
资助者	Knowledge Innovation Engineering of Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China
DOI	10.1016/j.sse.2009.01.003
收录类别	SCI
语种	英语
资助项目	Knowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02] ; National Nature Sciences Foundation of China[60576046] ; National Nature Sciences Foundation of China[60606002] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[513270605]
WOS研究方向	Engineering ; Physics
WOS类目	Engineering, Electrical & Electronic ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000264731300015
出版者	PERGAMON-ELSEVIER SCIENCE LTD
引用统计	被引频次：17[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/97340
专题	中国科学院金属研究所
通讯作者	Wang, X. L.
作者单位	1.Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Nanjing Electron Devices Inst, Nanjing 210016, Peoples R China
推荐引用方式 GB/T 7714	Wang, X. L.,Chen, T. S.,Xiao, H. L.,et al. An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application[J]. SOLID-STATE ELECTRONICS,2009,53(3):332-335.
APA	Wang, X. L..,Chen, T. S..,Xiao, H. L..,Tang, J..,Ran, J. X..,...&Wang, Z. G..(2009).An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application.SOLID-STATE ELECTRONICS,53(3),332-335.
MLA	Wang, X. L.,et al."An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application".SOLID-STATE ELECTRONICS 53.3(2009):332-335.