Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH4+Ar

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	Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH4+Ar
	Cheng, Hua 2,3; Wu, Aimin 1; Xiao, Jinquan 2; Shi, Nanlin 2; Wen, Lishi 2
通讯作者	Wu, Aimin(aimin@dlut.edu.cn)
	2009-07-01
发表期刊	JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN	1005-0302
卷号	25 期号:4 页码:489-491
摘要	Polycrystalline silicon (poly-Si) films were deposited using Ar diluted SiH4 gaseous mixture by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD). The effects of the substrate temperature on deposition rate, crystallinity, grain size and the configuration of H existing in poly-Si film were investigated. The results show that, comparing with H-2 dilution, Ar dilution could significantly decrease the concentration of H on the growing surface. When the substrate temperature increased, the deposition rate increased and the concentration of H decreased monotonously, but the crystallinity and the grain size of poly-Si films exhibited sophisticated trends. It is proposed that the crystallinity of the films is determined by a competing balance of the self-diffusion activity of Si atoms and the deposition rate. At substrate temperature of 200 degrees C, the deposited film exhibits the maximum poly-Si volume fraction of 79%. Based on these results, higher substrate temperature is suggested to prepare the poly-Si films with advanced stability and compromised crystallinity at high deposition rate.
关键词	Poly-Si films ECR-PECVD Substrate temperature Ar-dilution
收录类别	SCI
语种	英语
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:000268775200014
出版者	JOURNAL MATER SCI TECHNOL
引用统计	被引频次：4[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/97647
专题	中国科学院金属研究所
通讯作者	Wu, Aimin
作者单位	1.Dalian Univ Technol, Dalian 116024, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China 3.PLA, Armor Tech Inst, Changchun 130117, Peoples R China
推荐引用方式 GB/T 7714	Cheng, Hua,Wu, Aimin,Xiao, Jinquan,et al. Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH4+Ar[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2009,25(4):489-491.
APA	Cheng, Hua,Wu, Aimin,Xiao, Jinquan,Shi, Nanlin,&Wen, Lishi.(2009).Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH4+Ar.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,25(4),489-491.
MLA	Cheng, Hua,et al."Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH4+Ar".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 25.4(2009):489-491.