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Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer
Zhang, M. L.1; Wang, X. L.1,2; Xiao, H. L.1; Wang, C. M.1; Yang, C. B.1; Tang, J.1; Feng, C.1; Jiang, L. J.1; Hu, G. X.1; Ran, J. X.1; Wang, ZH. G.2
Corresponding AuthorZhang, M. L.(mlzhang@semi.ac.cn)
2009-02-01
Source PublicationSUPERLATTICES AND MICROSTRUCTURES
ISSN0749-6036
Volume45Issue:2Pages:54-59
AbstractAlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices (SLs) as barrier layer is grown on C-plane sapphire by metal organic vapor deposition (MOCVD). Compared with the conventional Si-doped structure, electrical property is improved. An average sheet resistance of 287.1 Omega/square and high resistance uniformity of 0.82% are obtained across the 2-inch epilayer wafer with an equivalent Al composition of 38%. Hall measurement shows that the mobility of two-dimensional electron gas (2DEG) is 1852 cm(2)/V s with a sheet carrier density of 1.2 x 10(13) cm(-2) at room temperature. The root mean square roughness (RMS) value is 0.159 nm with 5 x 5 mu m(2) scan area and the monolayer steps are clearly observed. The reason for the property improvement is discussed. (c) 2008 Elsevier Ltd. All rights reserved.
KeywordAlGaN/GaN heterostructure Superlattices (SLs) Root mean square roughness (RMS) Sheet resistance
DOI10.1016/j.spmi.2008.11.028
Indexed BySCI
Language英语
WOS Research AreaPhysics
WOS SubjectPhysics, Condensed Matter
WOS IDWOS:000263616500002
PublisherACADEMIC PRESS LTD ELSEVIER SCIENCE LTD
Citation statistics
Cited Times:8[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/99457
Collection中国科学院金属研究所
Corresponding AuthorZhang, M. L.
Affiliation1.Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Zhang, M. L.,Wang, X. L.,Xiao, H. L.,et al. Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer[J]. SUPERLATTICES AND MICROSTRUCTURES,2009,45(2):54-59.
APA Zhang, M. L..,Wang, X. L..,Xiao, H. L..,Wang, C. M..,Yang, C. B..,...&Wang, ZH. G..(2009).Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer.SUPERLATTICES AND MICROSTRUCTURES,45(2),54-59.
MLA Zhang, M. L.,et al."Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer".SUPERLATTICES AND MICROSTRUCTURES 45.2(2009):54-59.
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