| Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer | |
| Zhang, M. L.1; Wang, X. L.1,2; Xiao, H. L.1; Wang, C. M.1; Yang, C. B.1; Tang, J.1; Feng, C.1; Jiang, L. J.1; Hu, G. X.1; Ran, J. X.1; Wang, ZH. G.2 | |
| Corresponding Author | Zhang, M. L.(mlzhang@semi.ac.cn) |
| 2009-02-01 | |
| Source Publication | SUPERLATTICES AND MICROSTRUCTURES
 |
| ISSN | 0749-6036 |
| Volume | 45Issue:2Pages:54-59 |
| Abstract | AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices (SLs) as barrier layer is grown on C-plane sapphire by metal organic vapor deposition (MOCVD). Compared with the conventional Si-doped structure, electrical property is improved. An average sheet resistance of 287.1 Omega/square and high resistance uniformity of 0.82% are obtained across the 2-inch epilayer wafer with an equivalent Al composition of 38%. Hall measurement shows that the mobility of two-dimensional electron gas (2DEG) is 1852 cm(2)/V s with a sheet carrier density of 1.2 x 10(13) cm(-2) at room temperature. The root mean square roughness (RMS) value is 0.159 nm with 5 x 5 mu m(2) scan area and the monolayer steps are clearly observed. The reason for the property improvement is discussed. (c) 2008 Elsevier Ltd. All rights reserved. |
| Keyword | AlGaN/GaN heterostructure Superlattices (SLs) Root mean square roughness (RMS) Sheet resistance |
| DOI | 10.1016/j.spmi.2008.11.028 |
| Indexed By | SCI |
| Language | 英语 |
| WOS Research Area | Physics |
| WOS Subject | Physics, Condensed Matter |
| WOS ID | WOS:000263616500002 |
| Publisher | ACADEMIC PRESS LTD ELSEVIER SCIENCE LTD |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/99457 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Zhang, M. L. |
| Affiliation | 1.Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China |
| Recommended Citation GB/T 7714 | Zhang, M. L.,Wang, X. L.,Xiao, H. L.,et al. Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer[J]. SUPERLATTICES AND MICROSTRUCTURES,2009,45(2):54-59. |
| APA | Zhang, M. L..,Wang, X. L..,Xiao, H. L..,Wang, C. M..,Yang, C. B..,...&Wang, ZH. G..(2009).Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer.SUPERLATTICES AND MICROSTRUCTURES,45(2),54-59. |
| MLA | Zhang, M. L.,et al."Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer".SUPERLATTICES AND MICROSTRUCTURES 45.2(2009):54-59. |
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