Unique Electronic Structure Induced High Photoreactivity of Sulfur-Doped Graphitic C3N4

doi:10.1021/ja103798k

IMR OpenIR

	Unique Electronic Structure Induced High Photoreactivity of Sulfur-Doped Graphitic C3N4
	Liu, Gang 1; Niu, Ping 1; Sun, Chenghua 2,3; Smith, Sean C.3; Chen, Zhigang 2; Lu, Gao Qing (Max)2; Cheng, Hui-Ming 1
通讯作者	Cheng, Hui-Ming(cheng@imr.ac.cn)
	2010-08-25
发表期刊	JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
ISSN	0002-7863
卷号	132 期号:33 页码:11642-11648
摘要	Electronic structure intrinsically controls the light absorbance, redox potential, charge-carrier mobility, and consequently, photoreactivity of semiconductor photocatalysts. The conventional approach of modifying the electronic structure of a semiconductor photocatalyst for a wider absorption range by anion doping operates at the cost of reduced redox potentials and/or charge-carrier mobility, so that its photoreactivity is usually limited and some important reactions may not occur at all. Here, we report sulfur-doped graphitic C3N4 (C3N4-xSx) with a unique electronic structure that displays an increased valence bandwidth in combination with an elevated conduction band minimum and a slightly reduced absorbance. The C3N4-xSx shows a photoreactivity of H-2 evolution 7.2 and 8.0 times higher than C3N4 under lambda > 300 and 420 nm, respectively. More strikingly, the complete oxidation process of phenol under lambda > 400 nm can occur for sulfur-doped C3N4, which is impossible for C3N4 even under lambda > 300 nm. The homogeneous substitution of sulfur for lattice nitrogen and a concomitant quantum confinement effect are identified as the cause of this unique electronic structure and, consequently, the excellent photoreactivity of C3N4-xSx. The results acquired may shed light on general doping strategies for designing potentially efficient photocatalysts.
资助者	Ministry of Science and Technology of China ; NSFC ; Solar Energy Initiative of the Chinese Academy of Sciences (CAS), CAS ; China Postdoctoral Science Foundation ; IMR SYNL
DOI	10.1021/ja103798k
收录类别	SCI
语种	英语
资助项目	Ministry of Science and Technology of China[2009CB220001] ; NSFC[50921004] ; Solar Energy Initiative of the Chinese Academy of Sciences (CAS), CAS[KJCX2-YW-H21-01] ; China Postdoctoral Science Foundation[20100471486] ; IMR SYNL
WOS研究方向	Chemistry
WOS类目	Chemistry, Multidisciplinary
WOS记录号	WOS:000281066400051
出版者	AMER CHEMICAL SOC
引用统计	被引频次：1869[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/99764
专题	中国科学院金属研究所
通讯作者	Cheng, Hui-Ming
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Queensland, ARC Ctr Excellence Funct Nanomat, Brisbane, Qld 4072, Australia 3.Univ Queensland, Australia Inst Bioengn & Nanotechnol, Ctr Computat Mol Sci, Brisbane, Qld 4072, Australia
推荐引用方式 GB/T 7714	Liu, Gang,Niu, Ping,Sun, Chenghua,et al. Unique Electronic Structure Induced High Photoreactivity of Sulfur-Doped Graphitic C3N4[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,2010,132(33):11642-11648.
APA	Liu, Gang.,Niu, Ping.,Sun, Chenghua.,Smith, Sean C..,Chen, Zhigang.,...&Cheng, Hui-Ming.(2010).Unique Electronic Structure Induced High Photoreactivity of Sulfur-Doped Graphitic C3N4.JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,132(33),11642-11648.
MLA	Liu, Gang,et al."Unique Electronic Structure Induced High Photoreactivity of Sulfur-Doped Graphitic C3N4".JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 132.33(2010):11642-11648.