Unipolar resistive switching effect in YMn1-delta O3 thin films

doi:10.1063/1.3280380

IMR OpenIR

	Unipolar resistive switching effect in YMn1-delta O3 thin films
	Yan, Z. B.1; Li, S. Z.; Wang, K. F.; Liu, J. -M.
通讯作者	Yan, Z. B.()
	2010-01-04
发表期刊	APPLIED PHYSICS LETTERS
ISSN	0003-6951
卷号	96 期号:1 页码:3
摘要	Steady unipolar resistive switching of Pt/YMn1-delta O3/Pt MIM structure is investigated. High resistance ratio (>10(4)) of high resistance state (HRS) over low resistance state (LRS) and long retention (>10(5) s) are achieved. It is suggested that the Joule heating and Poole-Frenkel effect dominate respectively the conduction of the LRS and HRS in high electric field region. The resistive switching is explained by the rupture and formation of conductive filaments in association with the local Joule-heat-induced redox inside YMn1-delta O3.
关键词	electric resistance ferroelectric materials ferroelectric switching fracture insulating thin films MIM structures platinum Poole-Frenkel effect yttrium compounds
资助者	Natural Science Foundation of China ; National Key Projects for Basic Researches of China ; Jiangsu Province, China
DOI	10.1063/1.3280380
收录类别	SCI
语种	英语
资助项目	Natural Science Foundation of China[50832002] ; Natural Science Foundation of China[10874075] ; National Key Projects for Basic Researches of China[2006CB921802] ; National Key Projects for Basic Researches of China[2009CB623303] ; Jiangsu Province, China[BK2008024]
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000273473200019
出版者	AMER INST PHYSICS
引用统计	被引频次：43[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/99864
专题	中国科学院金属研究所
通讯作者	Yan, Z. B.
作者单位	1.Nanjing Univ, Nanjing Natl Lab Microstruct, Nanjing 210093, Peoples R China 2.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Yan, Z. B.,Li, S. Z.,Wang, K. F.,et al. Unipolar resistive switching effect in YMn1-delta O3 thin films[J]. APPLIED PHYSICS LETTERS,2010,96(1):3.
APA	Yan, Z. B.,Li, S. Z.,Wang, K. F.,&Liu, J. -M..(2010).Unipolar resistive switching effect in YMn1-delta O3 thin films.APPLIED PHYSICS LETTERS,96(1),3.
MLA	Yan, Z. B.,et al."Unipolar resistive switching effect in YMn1-delta O3 thin films".APPLIED PHYSICS LETTERS 96.1(2010):3.