Self-consistent analysis of AlSb/InAs high electron mobility transistor structures

doi:10.1063/1.3475722

IMR OpenIR

	Self-consistent analysis of AlSb/InAs high electron mobility transistor structures
	Li, Yanbo 1,2; Zhang, Yang 2; Zeng, Yiping 2
通讯作者	Li, Yanbo()
	2010-08-15
发表期刊	JOURNAL OF APPLIED PHYSICS
ISSN	0021-8979
卷号	108 期号:4 页码:7
摘要	The influences of channel layer width, spacer layer width, and delta-doping density on the electron density and its distribution in the AlSb/InAs high electron mobility transistors (HEMTs) have been studied based on the self-consistent calculation of the Schrodinger and Poisson equations with both the strain and nonparabolicity effects being taken into account. The results show that, having little influence on the total two dimensional electron gas (2DEG) concentration in the channel, the HEMT's channel layer width has some influence on the electron mobility, with a channel as narrow as 100-130 angstrom being more beneficial. For the AlSb/InAs HEMT with a Te delta-doped layer, the 2DEG concentration as high as 9.1 X 10(12) cm(-2) can be achieved in the channel by enhancing the delta-doping concentration without the occurrence of the parallel conduction. When utilizing a Si delta-doped InAs layer as the electron-supplying layer of the AlSb/InAs HEMT, the effect of the InAs donor layer thickness is studied on the 2DEG concentration. To obtain a higher 2DEG concentration in the channel, it is necessary to use an InAs donor layer as thin as 4 monolayer. To test the validity of our calculation, we have compared our theoretical results (2DEG concentration and its distribution in different sub-bands of the channel) with the experimental ones done by other groups and show that our theoretical calculation is consistent with the experimental results. (C) 2010 American Institute of Physics. [doi:10.1063/1.3475722]
资助者	Chinese Academy of Sciences
DOI	10.1063/1.3475722
收录类别	SCI
语种	英语
资助项目	Chinese Academy of Sciences[ISCAS2009T04]
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000281857100125
出版者	AMER INST PHYSICS
引用统计	被引频次：7[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/99924
专题	中国科学院金属研究所
通讯作者	Li, Yanbo
作者单位	1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Li, Yanbo,Zhang, Yang,Zeng, Yiping. Self-consistent analysis of AlSb/InAs high electron mobility transistor structures[J]. JOURNAL OF APPLIED PHYSICS,2010,108(4):7.
APA	Li, Yanbo,Zhang, Yang,&Zeng, Yiping.(2010).Self-consistent analysis of AlSb/InAs high electron mobility transistor structures.JOURNAL OF APPLIED PHYSICS,108(4),7.
MLA	Li, Yanbo,et al."Self-consistent analysis of AlSb/InAs high electron mobility transistor structures".JOURNAL OF APPLIED PHYSICS 108.4(2010):7.