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Near-Infrared Organic Photodetectors toward Skin-Integrated Photoplethysmography-Electrocardiography Multimodal Sensing System 期刊论文
ADVANCED SCIENCE, 2023, 页码: 14
作者:  Lou, Zirui;  Tao, Jun;  Wei, Binbin;  Jiang, Xinyu;  Cheng, Simin;  Wang, Zehao;  Qin, Chao;  Liang, Rong;  Guo, Haotian;  Zhu, Liping;  Mueller-Buschbaum, Peter;  Cheng, Hui-Ming;  Xu, Xiaomin
收藏  |  浏览/下载：6/0  |  提交时间：2024/01/07
flexible (opto)electronics  multimodal biosensing  near-infrared organic photodetectors  skin-integrated electronics  
Ultraflexible tattoo electrodes for epidermal and in vivo electrophysiological recording 期刊论文
CELL REPORTS PHYSICAL SCIENCE, 2023, 卷号: 4, 期号: 4, 页码: 23
作者:  Wei, Binbin;  Wang, Zitian;  Guo, Haotian;  Xie, Fei;  Cheng, Simin;  Lou, Zirui;  Zhou, Changjie;  Ji, Hongjun;  Zhang, Min;  Wang, Xiaohao;  Jiao, Xuechen;  Ma, Shaohua;  Cheng, Hui-Ming;  Xu, Xiaomin
收藏  |  浏览/下载：5/0  |  提交时间：2024/01/07
Ultrathin Hydrogel Films toward Breathable Skin-Integrated Electronics 期刊论文
ADVANCED MATERIALS, 2022, 页码: 15
作者:  Cheng, Simin;  Lou, Zirui;  Zhang, Lan;  Guo, Haotian;  Wang, Zitian;  Guo, Chuanfei;  Fukuda, Kenjiro;  Ma, Shaohua;  Wang, Guoqing;  Someya, Takao;  Cheng, Hui-Ming;  Xu, Xiaomin
收藏  |  浏览/下载：35/0  |  提交时间：2023/05/09
flexible (opto)electronics  mechanical compliance  skin-integrated electronics  ultrathin hydrogels  water-vapor permeability  
Ultrathin Hydrogel Films toward Breathable Skin-Integrated Electronics 期刊论文
ADVANCED MATERIALS, 2022, 页码: 15
作者:  Cheng, Simin;  Lou, Zirui;  Zhang, Lan;  Guo, Haotian;  Wang, Zitian;  Guo, Chuanfei;  Fukuda, Kenjiro;  Ma, Shaohua;  Wang, Guoqing;  Someya, Takao;  Cheng, Hui-Ming;  Xu, Xiaomin
收藏  |  浏览/下载：32/0  |  提交时间：2023/05/09
flexible (opto)electronics  mechanical compliance  skin-integrated electronics  ultrathin hydrogels  water-vapor permeability  
Growth mechanism of alpha(p) and interface relationships between alpha(p) and alpha(s) during cooling of alpha near a titanium alloy 期刊论文
MATERIALS & DESIGN, 2022, 卷号: 223, 页码: 13
作者:  Jia, Runchen;  Zeng, Weidong;  Zhao, Zibo;  Wang, Simin;  Xu, Jianwei;  Wang, Qingjiang
收藏  |  浏览/下载：32/0  |  提交时间：2023/05/09
Cooling rate  Epitaxial growth  Primary alpha(p)  Duplex microstructure  Secondary alpha(s)  
Growth mechanism of alpha(p) and interface relationships between alpha(p) and alpha(s) during cooling of alpha near a titanium alloy 期刊论文
MATERIALS & DESIGN, 2022, 卷号: 223, 页码: 13
作者:  Jia, Runchen;  Zeng, Weidong;  Zhao, Zibo;  Wang, Simin;  Xu, Jianwei;  Wang, Qingjiang
收藏  |  浏览/下载：28/0  |  提交时间：2023/05/09
Cooling rate  Epitaxial growth  Primary alpha(p)  Duplex microstructure  Secondary alpha(s)  
Resonant phonon modes induced by molecular rotations in alpha-pentaerythritol crystals 期刊论文
JOURNAL OF MATERIALS CHEMISTRY C, 2022, 卷号: 10, 期号: 39, 页码: 14431-14438
作者:  Wang, Simin;  Fan, Hongzhao;  Zhang, Zhe;  Sun, Liang;  Chen, Jialu;  Yang, Nuo;  Zhou, Yanguang;  Li, Bing;  Dai, Liang
收藏  |  浏览/下载：37/0  |  提交时间：2023/05/09
Atomistic Insights into the Anisotropic and Low Thermal Conductivity in Neopentyl Glycol Crystals: A Molecular Dynamics Study 期刊论文
JOURNAL OF PHYSICAL CHEMISTRY C, 2021, 卷号: 125, 期号: 29, 页码: 15853-15862
作者:  Wang, Simin;  Sun, Liang;  Li, Bing;  Dai, Liang
收藏  |  浏览/下载：108/0  |  提交时间：2021/10/15
Doping Concentration Modulation in Vanadium-Doped Monolayer Molybdenum Disulfide for Synaptic Transistors 期刊论文
ACS NANO, 2021, 卷号: 15, 期号: 4, 页码: 7340-7347
作者:  Zou, Jingyun;  Cai, Zhengyang;  Lai, Yongjue;  Tan, Junyang;  Zhang, Rongjie;  Feng, Simin;  Wang, Gang;  Lin, Junhao;  Liu, Bilu;  Cheng, Hui-Ming
收藏  |  浏览/下载：113/0  |  提交时间：2021/10/15
2D materials  molybdenum disulfide  MoS2  vanadium  substitutional doping  synaptic transistor  
Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS2 with Tunable Electronic Properties 期刊论文
SMALL, 2019, 页码: 9
作者:  Cai, Zhengyang;  Shen, Tianze;  Zhu, Qi;  Feng, Simin;  Yu, Qiangmin;  Liu, Jiaman;  Tang, Lei;  Zhao, Yue;  Wang, Jiangwei;  Liu, Bilu;  Cheng, Hui-Ming
收藏  |  浏览/下载：130/0  |  提交时间：2021/02/02
doping  dual-additive chemical vapor deposition  electronic properties  field effect transistors  hydrogen evolution reaction  MoS2