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A unified calculation of the optical spectral band positions and electron paramagnetic resonance spectral data for Yb3+ in InP semiconductor 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 卷号: 509, 期号: 18, 页码: 5660-5661
作者:  Feng, Wen-Lin;  Zheng, Wen-Chen;  Liu, Hong-Gang;  Li, X. M.
收藏  |  浏览/下载：85/0  |  提交时间：2021/02/02
Optical spectrum  Electron paramagnet resonance  Crystal-field theory  InP  Yb3+  
CALCULATION OF THE PHOTOLUMINESCENCE SPECTRA FOR Yb(3+)-DOPED CuInS(2) CRYSTAL 期刊论文
Modern Physics Letters B, 2011, 卷号: 25, 期号: 30, 页码: 2307-2312
作者:  P. Su;  W. C. Zheng;  H. G. Liu
收藏  |  浏览/下载：150/0  |  提交时间：2012/04/13
Luminescence Spectrum  Defect Structure  Crystal Field Theory  Cuins(2)  Yb(3+)  Superposition-model Analysis  Spin-hamiltonian Parameters  Rare-earth-elements  Optical Spectroscopy  Epr Parameters  Yb3++ Ions  Field  Luminescence  Zngep2  Inp  
A unified calculation of the optical spectral band positions and electron paramagnetic resonance spectral data for Yb(3+) in InP semiconductor 期刊论文
Journal of Alloys and Compounds, 2011, 卷号: 509, 期号: 18, 页码: 5660-5661
作者:  W. L. Feng;  W. C. Zheng;  H. G. Liu;  X. M. Li
Adobe PDF(119Kb)  |  收藏  |  浏览/下载：126/0  |  提交时间：2012/04/13
Optical Spectrum  Electron Paramagnet Resonance  Crystal-field Theory  Inp  Yb(3+)  Rare-earth-elements  Epr Parameters  Spectroscopy  Ions  Crystals  Centers  Srf2  Caf2  Gan  
Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature 期刊论文
CHINESE PHYSICS, 2006, 卷号: 15, 期号: 6, 页码: 1335-1338
作者:  Zhang, Y;  Zeng, YP;  Ma, L;  Wang, BQ;  Zhu, ZP;  Wang, LC;  Yang, FH
收藏  |  浏览/下载：76/0  |  提交时间：2021/02/02
resonant tunnelling diode  InP substrate  molecular beam epitaxy  high resolution transmission electron microscope  
Theoretical explanation of the EPR parameters of tetragonal Ti3+ centers in ZnSe and CdS0.75Se0.25 semiconductors 期刊论文
Zeitschrift Fur Naturforschung Section a-a Journal of Physical Sciences, 2006, 卷号: 61, 期号: 9, 页码: 505-508
作者:  X. X. Wu;  W. L. Feng;  Q. Zhou;  W. C. Zheng
收藏  |  浏览/下载：134/0  |  提交时间：2012/04/14
Crystal- And ligAnd-field Theory  Electron Paramagnetic Resonance  Local  Lattice Distortion  Ii-vi Semiconductors  Ti3++  Paramagnetic-resonance Parameters  Atomic Screening Constants  Scf  Functions  Crystals  Defect  Model  Ions  Inp  Cds  Fe  
Deep level defects in high temperature annealed InP 期刊论文
SCIENCE IN CHINA SERIES E-ENGINEERING & MATERIALS SCIENCE, 2004, 卷号: 47, 期号: 3, 页码: 320-326
作者:  Dong, ZY;  Zhao, YM;  Zeng, YP;  Duan, ML;  Lin, LY
收藏  |  浏览/下载：98/0  |  提交时间：2021/02/02
InP  defects  annealing ambience  
Annealing and activation of silicon implanted in semi-insulating InP substrates 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2003, 卷号: 6, 期号: 4, 页码: 215-218
作者:  Dong, HW;  Zhao, YW;  Li, JM
收藏  |  浏览/下载：65/0  |  提交时间：2021/02/02
semi-insulating InP  ion implantation  silicon  annealing  activation  
Annealing and activation of silicon implanted in semi-insulating InP substrates 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2003, 卷号: 6, 期号: 4, 页码: 215-218
作者:  Dong, HW;  Zhao, YW;  Li, JM
收藏  |  浏览/下载：65/0  |  提交时间：2021/02/02
semi-insulating InP  ion implantation  silicon  annealing  activation  
A plane-wave pseudopotential study on III-V zinc-blende and wurtzite semiconductors under pressure 期刊论文
Journal of Physics-Condensed Matter, 2002, 卷号: 14, 期号: 41, 页码: 9579-9587
作者:  S. Q. Wang;  H. Q. Ye
收藏  |  浏览/下载：129/0  |  提交时间：2012/04/14
Direct Energy-gap  Hydrostatic-pressure  Electronic-structure  Gallium  Nitride  Dependence  Temperature  State  Inp  Photoluminescence  Transitions  
Theoretical studies of the g factor of V3+ in III-V semiconductors 期刊论文
Semiconductor Science and Technology, 1999, 卷号: 14, 期号: 9, 页码: 883-885
作者:  W. C. Zheng;  S. Y. Wu;  W. Li
收藏  |  浏览/下载：122/0  |  提交时间：2012/04/14
Electron-paramagnetic-resonance  Transition-metal Impurities  Vanadium  Gaas  Crystal  Epr  Spectra  Cr2++  Gap  Inp