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Synthesis of semimetal A(3)Bi (A = Na, K) thin films by molecular beam epitaxy 期刊论文
Applied Surface Science, 2015, 卷号: 327, 页码: 213-217
作者:  J.;  Guo Wen, H.;  Yan, C. H.;  Wang, Z. Y.;  Chang, K.;  Deng, P.;  Zhang, T.;  Zhang, Z. D.;  Ji, S. H.;  Wang, L. L.;  He, K.;  Ma, X. C.;  Chen, X.;  Xue, Q. K.
收藏  |  浏览/下载:170/0  |  提交时间:2015/05/08
Na3bi  K3bi  Stm  Arpes  Mbe  3-dimensional Topological Insulator  Single Dirac Cone  Electronic-structure  Graphene  Bi2te3  Phase  Surface  Bi2se3  Limit  
Application of high-concentration ozone in the preparation of Bi-based oxide thin films by molecular beam epitaxy 期刊论文
ACTA METALLURGICA SINICA, 2008, 卷号: 44, 期号: 6, 页码: 647-651
作者:  Zhang Bingsen;  Yu Xiaoming;  Sun Xiaguang;  Li Maolin;  Zhang Caibei;  Qi Yang
收藏  |  浏览/下载:106/0  |  提交时间:2021/02/02
GROWTH  DEPOSITION  GENERATOR  PRESSURE  INSITU  LAYER  ozone  concentrating apparatus  Bi-based oxide thin film  molecular beam epitaxy (MBE)