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Coupled Current Jumps and Domain Wall Creeps in a Defect-Engineered Ferroelectric Resistive Memory 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2021, 页码: 10
作者:  Huang, Biaohong;  Xie, Zhongshuai;  Feng, Dingshuai;  Li, Lingli;  Li, Xiaoqi;  Paudel, Tula R.;  Han, Zheng;  Hu, Weijin;  Yuan, Guoliang;  Wu, Tom;  Zhang, Zhidong
收藏  |  浏览/下载：110/0  |  提交时间：2022/07/01
BiFeO3  current jump  domain wall creep  ferroelectric resistive switching  oxygen vacancy  space-charge-limited current