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放电气体对ECR-PECVD法制备微晶硅薄膜的影响 期刊论文
材料研究学报, 2013, 期号: 3, 页码: 307-311
Authors:  程华;  钱永产;  薛军;  吴爱民;  石南林
Favorite  |  View/Download:87/0  |  Submit date:2013/12/25
材料合成与加工工艺  微晶硅薄膜  Ecr-pecvd  放电气体  
Frictional and Optical Properties of Diamond-Like-Carbon Coatings on Polycarbonate 期刊论文
PLASMA SCIENCE & TECHNOLOGY, 2013, 卷号: 15, 期号: 7, 页码: 690-695
Authors:  Lin Zeng;  Wang Feng;  Gao Ding;  Ba Dechun;  Liu Chunming
Favorite  |  View/Download:64/0  |  Submit date:2021/02/26
MECHANICAL-PROPERTIES  FILMS  DEPOSITION  RAMAN  diamond-like-carbon films  PECVD  microstructure  frictional and optical properties  
Effect of argon on the structure of hydrogenated nanocrystalline silicon deposited from tetrachlorosilane/hydrogen/argon plasma 期刊论文
Physica Status Solidi a-Applications and Materials Science, 2012, 卷号: 209, 期号: 6, 页码: 1080-1084
Authors:  L. Zhang;  J. H. Gao;  J. Q. Xiao;  L. S. Wen;  J. Gong;  C. Sun
Favorite  |  View/Download:88/0  |  Submit date:2013/02/05
Hydrogen Concentration  Microstructure  Nanocrystalline Silicon  Raman  Spectra  Chemical-vapor-deposition  Low-temperature Growth  Amorphous-silicon  Microcrystalline Silicon  Raman-spectroscopy  Solar-cells  Thin-films  Chemistry  Mechanism  Kinetics  
Low-temperature (120 degrees C) growth of nanocrystalline silicon films prepared by plasma enhanced chemical vapor deposition from SiCl4/H-2 gases: Microstructure characterization 期刊论文
Applied Surface Science, 2012, 卷号: 258, 期号: 7, 页码: 3221-3226
Authors:  L. Zhang;  J. H. Gao;  J. Q. Xiao;  L. S. Wen;  J. Gong;  C. Sun
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Nanocrystalline Silicon  Pecvd  Microstructure  Raman Spectra  Hydrogenated Amorphous-silicon  Thin-films  Raman-spectroscopy  Solar-cells  Mechanism  Sih2cl2  
PECVD裂解SiCl4低温快速沉积氢化纳米晶硅薄膜的研究 学位论文
, 北京: 中国科学院金属研究所, 2012
Authors:  张林
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等离子体增强化学气相沉积法  氢化纳米硅薄膜  微观结构  Pecvd  Nc-si:h Film  Microstructure  
基片温度对微晶硅薄膜微观结构和光学性能的影响 期刊论文
材料研究学报, 2011, 期号: 4, 页码: 408-412
Authors:  程华;  王萍;  崔岩;  吴爱民;  石南林
Favorite  |  View/Download:61/0  |  Submit date:2012/04/12
材料合成与加工工艺  微晶硅薄膜  Ecr Pecvd  吸收系数  光学带隙  
Effect of Enhanced Plasma Density on the Properties of Aluminium Doped Zinc Oxide Thin Films Produced by DC Magnetron Sputtering 期刊论文
Journal of Materials Science & Technology, 2011, 卷号: 27, 期号: 5, 页码: 393-397
Authors:  J. Gong;  X. B. Zhang;  Z. L. Pei;  C. Sun;  L. S. Wen
Adobe PDF(622Kb)  |  Favorite  |  View/Download:68/0  |  Submit date:2012/04/13
Sputtering  Electronic Conductivity  Ion Bombardmentplasma Density  Transparent  Temperature  Parameters  Deposition  
用等离子体增强化学气相沉积制备微晶硅薄膜 期刊论文
材料研究学报, 2010, 期号: 5, 页码: 547-549
Authors:  程华;  张昕;  张广城;  刘汝宏;  吴爱民;  石南林
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材料合成与加工工艺  微晶硅薄膜  Ar稀释sih_4  Ecr-pecvd  微波功率  
Oxidation Behavior of a Ti(3)AlC(2)/TiB(2) Composite at 1000 degrees-1400 degrees C in Air 期刊论文
Journal of the American Ceramic Society, 2010, 卷号: 93, 期号: 2, 页码: 554-560
Authors:  M. S. Li;  C. Li;  J. J. Li;  Y. C. Zhou
Adobe PDF(917Kb)  |  Favorite  |  View/Download:47/0  |  Submit date:2012/04/13
High-temperature Oxidation  Ternary Carbide Ti3alc2  tin+1alxn N=1-3  Oxide Scale  Microstructures  Coatings  System  
Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH4+Ar 期刊论文
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2009, 卷号: 25, 期号: 4, 页码: 489-491
Authors:  Cheng, Hua;  Wu, Aimin;  Xiao, Jinquan;  Shi, Nanlin;  Wen, Lishi
Favorite  |  View/Download:37/0  |  Submit date:2021/02/02
Poly-Si films  ECR-PECVD  Substrate temperature  Ar-dilution