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放电气体对ECR-PECVD法制备微晶硅薄膜的影响 期刊论文
材料研究学报, 2013, 期号: 3, 页码: 307-311
Authors:  程华;  钱永产;  薛军;  吴爱民;  石南林
Favorite  |  View/Download:82/0  |  Submit date:2013/12/25
材料合成与加工工艺  微晶硅薄膜  Ecr-pecvd  放电气体  
Frictional and Optical Properties of Diamond-Like-Carbon Coatings on Polycarbonate 期刊论文
PLASMA SCIENCE & TECHNOLOGY, 2013, 卷号: 15, 期号: 7, 页码: 690-695
Authors:  Lin Zeng;  Wang Feng;  Gao Ding;  Ba Dechun;  Liu Chunming
Favorite  |  View/Download:55/0  |  Submit date:2021/02/26
MECHANICAL-PROPERTIES  FILMS  DEPOSITION  RAMAN  diamond-like-carbon films  PECVD  microstructure  frictional and optical properties  
Low-temperature (120 degrees C) growth of nanocrystalline silicon films prepared by plasma enhanced chemical vapor deposition from SiCl4/H-2 gases: Microstructure characterization 期刊论文
Applied Surface Science, 2012, 卷号: 258, 期号: 7, 页码: 3221-3226
Authors:  L. Zhang;  J. H. Gao;  J. Q. Xiao;  L. S. Wen;  J. Gong;  C. Sun
Favorite  |  View/Download:70/0  |  Submit date:2013/02/05
Nanocrystalline Silicon  Pecvd  Microstructure  Raman Spectra  Hydrogenated Amorphous-silicon  Thin-films  Raman-spectroscopy  Solar-cells  Mechanism  Sih2cl2  
PECVD裂解SiCl4低温快速沉积氢化纳米晶硅薄膜的研究 学位论文
, 北京: 中国科学院金属研究所, 2012
Authors:  张林
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等离子体增强化学气相沉积法  氢化纳米硅薄膜  微观结构  Pecvd  Nc-si:h Film  Microstructure  
基片温度对微晶硅薄膜微观结构和光学性能的影响 期刊论文
材料研究学报, 2011, 期号: 4, 页码: 408-412
Authors:  程华;  王萍;  崔岩;  吴爱民;  石南林
Favorite  |  View/Download:50/0  |  Submit date:2012/04/12
材料合成与加工工艺  微晶硅薄膜  Ecr Pecvd  吸收系数  光学带隙  
用等离子体增强化学气相沉积制备微晶硅薄膜 期刊论文
材料研究学报, 2010, 期号: 5, 页码: 547-549
Authors:  程华;  张昕;  张广城;  刘汝宏;  吴爱民;  石南林
Favorite  |  View/Download:78/0  |  Submit date:2012/04/12
材料合成与加工工艺  微晶硅薄膜  Ar稀释sih_4  Ecr-pecvd  微波功率  
Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH4+Ar 期刊论文
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2009, 卷号: 25, 期号: 4, 页码: 489-491
Authors:  Cheng, Hua;  Wu, Aimin;  Xiao, Jinquan;  Shi, Nanlin;  Wen, Lishi
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Poly-Si films  ECR-PECVD  Substrate temperature  Ar-dilution  
PECVD硅烷分解法制备硅层基本规律的研究 学位论文
, 金属研究所: 中国科学院金属研究所, 2009
Authors:  程华
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微晶硅薄膜  Pecvd  Ar放电  沉积速率  组织结构  结晶状态  薄膜稳定性  电学特性  光学特性  
Raman Spectra Analysis of Bromine Doped Hydrogenated Amorphous Carbon (a-C : Br : H) Films Deposited by RF-PECVD 期刊论文
Spectroscopy and Spectral Analysis, 2009, 卷号: 29, 期号: 12, 页码: 3309-3311
Authors:  J. H. Feng;  T. C. Lu;  W. D. Wu;  P. Jia
Adobe PDF(226Kb)  |  Favorite  |  View/Download:55/0  |  Submit date:2012/04/13
Raman Spectroscopy  Rf-pecvd  A-c:Br:h  Sp(2)  Thin-films  Diamond  Spectroscopy  
Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH(4)+Ar 期刊论文
Journal of Materials Science & Technology, 2009, 卷号: 25, 期号: 4, 页码: 489-491
Authors:  H. Cheng;  A. M. Wu;  J. Q. Xiao;  N. L. Shi;  L. S. Wen
Adobe PDF(282Kb)  |  Favorite  |  View/Download:37/0  |  Submit date:2012/04/13
Poly-si Films  Ecr-pecvd  Substrate Temperature  Ar-dilution  Chemical-vapor-deposition  Ar-diluted Sih4  Microcrystalline Silicon  Optical-properties  h Films  Plasma  Pecvd  Hydrogen  Silane