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Deposition and properties of highly c-oriented of InN films on sapphire substrates with ECR-plasma-enhanced MOCVD 期刊论文
RARE METALS, 2012, 卷号: 31, 期号: 2, 页码: 150-153
Authors:  Qin Fuwen;  Zhang Dong;  Bai Yizhen;  Ju Zhenhe;  Li Shuangmei;  Li Yucai;  Pang Jiaqi;  Bian Jiming
Favorite  |  View/Download:41/0  |  Submit date:2021/02/02
MOLECULAR-BEAM EPITAXY  GROWTH  InN films  ECR-PEMOCVD  sapphire substrates  semiconductor devices