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Understanding Interlayer Coupling in TMD-hBN Heterostructure by Raman Spectroscopy 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 10, 页码: 4059-4067
Authors:  Ding, L;  Ukhtary, MS;  Chubarov, M;  Choudhury, TH;  Zhang, F;  Yang, R;  Zhang, A;  Fan, JA;  Terrones, M;  Redwing, JM;  Yang, T;  Li, MD;  Saito, R;  Huang, SX
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