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Annealing ambient controlled deep defect formation in InP 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2004, 卷号: 27, 期号: 1-3, 页码: 167-169
Authors:  Zhao, YW;  Dong, ZY;  Duan, ML;  Sun, WR;  Zeng, YP;  Sun, NF;  Sun, TN
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Study on the perfection of in situ P-injection synthesis LEC-InP single crystals 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 264, 期号: 1-3, 页码: 17-20
Authors:  Zhou, XL;  Zhao, YW;  Sun, NF;  Yang, GY;  Xu, YQ;  Sun, TN
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etch-pit density  phosphorus-rich  PL-mapping  indium phosphide  
Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers 期刊论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 卷号: 91, 页码: 521-524
Authors:  Zhao, YW;  Sun, NF;  Dong, HW;  Jiao, JH;  Zhao, JQ;  Sun, TN;  Lin, LY
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indium phosphide  semi-insulating  annealing  PICTS  photoluminescence  
Positron-annihilation study of compensation defects in InP 期刊论文
JOURNAL OF APPLIED PHYSICS, 2002, 卷号: 91, 期号: 4, 页码: 1998-2001
Authors:  Shan, YY;  Deng, AH;  Ling, CC;  Fung, S;  Ling, CD;  Zhao, YW;  Sun, TN;  Sun, NF
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