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Enhanced optoelectronic performance of 3C-SiC/ZnO heterostructure photodetector based on Piezo-phototronic effect
期刊论文
NANO ENERGY, 2020, 卷号: 77
Authors:
Zhang, Xinglai
;
Wang, Hanwen
;
Zhang, Jian
;
Li, Jiangxu
;
Ma, Zongyi
;
Li, Jing
;
Leng, Bing
;
Niu, Pingjuan
;
Liu, Baodan
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Submit date:2021/02/03
Room temperature ferromagnetism in ultra-thin van der Waals crystals of 1T-CrTe2
期刊论文
NANO RESEARCH, 2020, 页码: 6
Authors:
Sun, Xingdan
;
Li, Wanying
;
Wang, Xiao
;
Sui, Qi
;
Zhang, Tongyao
;
Wang, Zhi
;
Liu, Long
;
Li, Da
;
Feng, Shun
;
Zhong, Siyu
;
Wang, Hanwen
;
Bouchiat, Vincent
;
Regueiro, Manuel Nunez
;
Rougemaille, Nicolas
;
Coraux, Johann
;
Purbawati, Anike
;
Hadj-Azzem, Abdellali
;
Wang, Zhenhua
;
Dong, Baojuan
;
Wu, Xing
;
Yang, Teng
;
Yu, Guoqiang
;
Wang, Bingwu
;
Han, Zheng
;
Han, Xiufeng
;
Zhang, Zhidong
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  |  
Submit date:2021/02/02
room temperature ferromagnetism
two dimensional (2D)
CrTe2
anisotropic magnetoresistance (AMR)
基于二维功能材料的新型器件设计与构筑
学位论文
, 沈阳: 中国科学院金属研究所, 2020
Authors:
王汉文
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Submit date:2021/03/15
Field-Free Switching of a Spin-Orbit-Torque Device Through Interlayer-Coupling-Induced Domain Walls
期刊论文
PHYSICAL REVIEW APPLIED, 2020, 卷号: 13, 期号: 4, 页码: 10
Authors:
Zhao, Xiaotian
;
Ji, Lianze
;
Liu, Wei
;
Li, Shangkun
;
Liu, Long
;
Song, Yuhang
;
Li, Yang
;
Ma, Jun
;
Sun, Xingdan
;
Wang, Hanwen
;
Zhao, Xinguo
;
Zhang, Zhidong
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Submit date:2021/02/02
Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors
期刊论文
CRYSTALS, 2020, 卷号: 10, 期号: 3, 页码: 9
Authors:
Xia, Xiuxin
;
Sun, Xingdan
;
Wang, Hanwen
;
Li, Xiaoxi
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View/Download:1/0
  |  
Submit date:2021/02/02
contact
alloying
GaTe
Pd electrode
Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors
期刊论文
CRYSTALS, 2020, 卷号: 10, 期号: 3, 页码: 9
Authors:
Xia, Xiuxin
;
Sun, Xingdan
;
Wang, Hanwen
;
Li, Xiaoxi
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View/Download:1/0
  |  
Submit date:2021/02/02
contact
alloying
GaTe
Pd electrode
In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects
期刊论文
NANOSCALE ADVANCES, 2020, 卷号: 2, 期号: 1, 页码: 109-139
Authors:
Zhao, Siwen
;
Dong, Baojuan
;
Wang, Huide
;
Wang, Hanwen
;
Zhang, Yupeng
;
Han, Zheng Vitto
;
Zhang, Han
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View/Download:5/0
  |  
Submit date:2021/02/03
Metal–insulator transition in few-layered GaTe transistors
期刊论文
半导体学报:英文版, 2020, 卷号: 41.0, 期号: 007, 页码: 28-32
Authors:
Xiuxin Xia
;
Xiaoxi Li
;
Hanwen Wang
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  |  
View/Download:1/0
  |  
Submit date:2021/02/02
metal-insulator
transition
gate
tunable
GaTe
field
effect
transistors
Metal–insulator transition in few-layered GaTe transistors
期刊论文
半导体学报:英文版, 2020, 卷号: 41.0, 期号: 007, 页码: 28-32
Authors:
Xiuxin Xia
;
Xiaoxi Li
;
Hanwen Wang
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View/Download:2/0
  |  
Submit date:2021/02/02
metal-insulator
transition
gate
tunable
GaTe
field
effect
transistors
A FinFET with one atomic layer channel
期刊论文
naturecommunications, 2020, 卷号: 11, 期号: 1, 页码: 1-7
Authors:
Mao-Lin Chen
;
Xingdan Sun
;
Hang Liu
;
Hanwen Wang
;
Qianbing Zhu
;
Shasha Wang
;
Haifeng Du
;
Baojuan Dong
;
Jing Zhang
;
Yun Sun
;
Song Qiu
;
Thomas Alava
;
Song Liu
;
Dong-Ming Sun
;
Zheng Han
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View/Download:9/0
  |  
Submit date:2021/02/02