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Enhanced optoelectronic performance of 3C-SiC/ZnO heterostructure photodetector based on Piezo-phototronic effect 期刊论文
NANO ENERGY, 2020, 卷号: 77
Authors:  Zhang, Xinglai;  Wang, Hanwen;  Zhang, Jian;  Li, Jiangxu;  Ma, Zongyi;  Li, Jing;  Leng, Bing;  Niu, Pingjuan;  Liu, Baodan
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Room temperature ferromagnetism in ultra-thin van der Waals crystals of 1T-CrTe2 期刊论文
NANO RESEARCH, 2020, 页码: 6
Authors:  Sun, Xingdan;  Li, Wanying;  Wang, Xiao;  Sui, Qi;  Zhang, Tongyao;  Wang, Zhi;  Liu, Long;  Li, Da;  Feng, Shun;  Zhong, Siyu;  Wang, Hanwen;  Bouchiat, Vincent;  Regueiro, Manuel Nunez;  Rougemaille, Nicolas;  Coraux, Johann;  Purbawati, Anike;  Hadj-Azzem, Abdellali;  Wang, Zhenhua;  Dong, Baojuan;  Wu, Xing;  Yang, Teng;  Yu, Guoqiang;  Wang, Bingwu;  Han, Zheng;  Han, Xiufeng;  Zhang, Zhidong
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room temperature ferromagnetism  two dimensional (2D)  CrTe2  anisotropic magnetoresistance (AMR)  
基于二维功能材料的新型器件设计与构筑 学位论文
, 沈阳: 中国科学院金属研究所, 2020
Authors:  王汉文
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Field-Free Switching of a Spin-Orbit-Torque Device Through Interlayer-Coupling-Induced Domain Walls 期刊论文
PHYSICAL REVIEW APPLIED, 2020, 卷号: 13, 期号: 4, 页码: 10
Authors:  Zhao, Xiaotian;  Ji, Lianze;  Liu, Wei;  Li, Shangkun;  Liu, Long;  Song, Yuhang;  Li, Yang;  Ma, Jun;  Sun, Xingdan;  Wang, Hanwen;  Zhao, Xinguo;  Zhang, Zhidong
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Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors 期刊论文
CRYSTALS, 2020, 卷号: 10, 期号: 3, 页码: 9
Authors:  Xia, Xiuxin;  Sun, Xingdan;  Wang, Hanwen;  Li, Xiaoxi
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contact  alloying  GaTe  Pd electrode  
Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors 期刊论文
CRYSTALS, 2020, 卷号: 10, 期号: 3, 页码: 9
Authors:  Xia, Xiuxin;  Sun, Xingdan;  Wang, Hanwen;  Li, Xiaoxi
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contact  alloying  GaTe  Pd electrode  
In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects 期刊论文
NANOSCALE ADVANCES, 2020, 卷号: 2, 期号: 1, 页码: 109-139
Authors:  Zhao, Siwen;  Dong, Baojuan;  Wang, Huide;  Wang, Hanwen;  Zhang, Yupeng;  Han, Zheng Vitto;  Zhang, Han
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Metal–insulator transition in few-layered GaTe transistors 期刊论文
半导体学报:英文版, 2020, 卷号: 41.0, 期号: 007, 页码: 28-32
Authors:  Xiuxin Xia;  Xiaoxi Li;  Hanwen Wang
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metal-insulator  transition  gate  tunable  GaTe  field  effect  transistors  
Metal–insulator transition in few-layered GaTe transistors 期刊论文
半导体学报:英文版, 2020, 卷号: 41.0, 期号: 007, 页码: 28-32
Authors:  Xiuxin Xia;  Xiaoxi Li;  Hanwen Wang
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metal-insulator  transition  gate  tunable  GaTe  field  effect  transistors  
A FinFET with one atomic layer channel 期刊论文
naturecommunications, 2020, 卷号: 11, 期号: 1, 页码: 1-7
Authors:  Mao-Lin Chen;  Xingdan Sun;  Hang Liu;  Hanwen Wang;  Qianbing Zhu;  Shasha Wang;  Haifeng Du;  Baojuan Dong;  Jing Zhang;  Yun Sun;  Song Qiu;  Thomas Alava;  Song Liu;  Dong-Ming Sun;  Zheng Han
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