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Kinetics controlled aging effect of ferroelectricity in Al-doped and Ga-doped BaTiO3
Guo, Y. Y.; Qin, M. H.; Wei, T.; Wang, K. F.; Liu, J. -M.1
通讯作者Liu, J. -M.(liujm@nju.edu.cn)
2010-09-13
发表期刊APPLIED PHYSICS LETTERS
ISSN0003-6951
卷号97期号:11页码:3
摘要Our experiments on ferroelectric aging of Al3+- and Ga3+-doped BaTiO3 ceramics reveal the crucial role of migration kinetics of point defects (oxygen vacancies) besides the thermodynamic driving force based on the symmetry conforming short-range ordering scenario. The doping with Ga3+ or tiny Al3+ ions shows the clear aging effect, while the high-level Al3+-doping suppresses the aging effect. The suppression is mainly attributed to the kinetically limited migration of oxygen vacancies due to the lattice shrinkage, while the other mechanisms may also make sense. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3490700]
资助者National Natural Science Foundation of China ; National Key Projects for Basic Researches of China
DOI10.1063/1.3490700
收录类别SCI
语种英语
资助项目National Natural Science Foundation of China[50832002] ; National Natural Science Foundation of China[10874085] ; National Key Projects for Basic Researches of China[2009CB623303] ; National Key Projects for Basic Researches of China[2011CB922101]
WOS研究方向Physics
WOS类目Physics, Applied
WOS记录号WOS:000282032900059
出版者AMER INST PHYSICS
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被引频次:26[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/100163
专题中国科学院金属研究所
通讯作者Liu, J. -M.
作者单位1.Nanjing Univ, Solid State Microstruct Lab, Nanjing 210093, Peoples R China
2.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China
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Guo, Y. Y.,Qin, M. H.,Wei, T.,et al. Kinetics controlled aging effect of ferroelectricity in Al-doped and Ga-doped BaTiO3[J]. APPLIED PHYSICS LETTERS,2010,97(11):3.
APA Guo, Y. Y.,Qin, M. H.,Wei, T.,Wang, K. F.,&Liu, J. -M..(2010).Kinetics controlled aging effect of ferroelectricity in Al-doped and Ga-doped BaTiO3.APPLIED PHYSICS LETTERS,97(11),3.
MLA Guo, Y. Y.,et al."Kinetics controlled aging effect of ferroelectricity in Al-doped and Ga-doped BaTiO3".APPLIED PHYSICS LETTERS 97.11(2010):3.
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