| Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy | |
| Zhao, Jie1,2; Zeng, Yiping1,2; Liu, Chao1,2; Li, Yanbo1,2 | |
| Corresponding Author | Zhao, Jie(jiezhao_sub@163.com) |
| 2010-04-15 | |
| Source Publication | JOURNAL OF CRYSTAL GROWTH
 |
| ISSN | 0022-0248 |
| Volume | 312Issue:9Pages:1491-1495 |
| Abstract | ZnTe thin films have been grown on GaAs(0 0 1) substrates at different temperatures with constant Zn and Te beam equivalent pressures (BEPs) by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) observation indicates that two-dimensional (2D) growth mode can be established after around one-minute three-dimensional (3D) nucleation by increasing the substrate temperature to 340 degrees C. We found that Zn desorption from the ZnTe surface is much greater than that of Te at higher temperatures, and estimated the Zn sticking coefficient by the evolution of growth rate. The Zn sticking coefficient decreases from 0.93 to 0.58 as the temperature is elevated from 320 to 400 degrees C. The ZnTe epilayer grown at 360 degrees C displays the narrowest full-width at half-maximum (FWHM) of 660 arcsec from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) measurements. The surface morphology of ZnTe epilayers is strongly dependent on the substrate temperature, and the root-mean-square (RMS) roughness diminishes drastically with the increase in temperature. (C) 2010 Elsevier B.V. All rights reserved. |
| Keyword | Reflection high-energy electron diffraction Atomic force microscopy Molecular beam epitaxy Zinc compounds Semiconducting II-VI materials |
| Funding Organization | Knowledge Innovation Program Foundation of Institute of semiconductors, CAS ; National Natural Science Foundation of China |
| DOI | 10.1016/j.jcrysgro.2010.01.032 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | Knowledge Innovation Program Foundation of Institute of semiconductors, CAS[09S1010001] ; National Natural Science Foundation of China[0913120000] |
| WOS Research Area | Crystallography ; Materials Science ; Physics |
| WOS Subject | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| WOS ID | WOS:000277530200004 |
| Publisher | ELSEVIER SCIENCE BV |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/100510 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Zhao, Jie |
| Affiliation | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China |
| Recommended Citation GB/T 7714 | Zhao, Jie,Zeng, Yiping,Liu, Chao,et al. Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2010,312(9):1491-1495. |
| APA | Zhao, Jie,Zeng, Yiping,Liu, Chao,&Li, Yanbo.(2010).Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,312(9),1491-1495. |
| MLA | Zhao, Jie,et al."Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 312.9(2010):1491-1495. |
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