Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN

doi:10.1088/0256-307X/27/5/057104

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	Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN
	Hou Qi-Feng 1; Wang Xiao-Liang 1,2; Xiao Hong-Ling 1,2; Wang Cui-Mei 1,2; Yang Cui-Bai 1,2; Li Jin-Min 1
通讯作者	Hou Qi-Feng(qfhou@semi.ac.cn)
	2010-05-01
发表期刊	CHINESE PHYSICS LETTERS
ISSN	0256-307X
卷号	27 期号:5 页码:4
摘要	The optical quenching of photoconductivity under dual illumination in GaN samples with different resistivity is investigated to reveal the variation of deep levels. The samples are grown by metal organic chemical vapour deposition without intentional doping. Quenching bands centered at 1.35 eV, 1.55 eV, 1.98 eV, and 2.60 eV are observed. It is found that the 1.98 eV quenching band is dominated in all the samples and the 2.60 eV band is observed only in the high-resistivity samples. The possible defect levels responsible for the quenching bands and the origin of different quenching behaviour at 2.60 eV are discussed. It is suggested that the defect level responsible for quenching at 2.60 eV plays an important role for the enhancement of resistivity.
资助者	Chinese Academy of Sciences ; National Natural Sciences Foundation of China ; National Basic Research Program of China
DOI	10.1088/0256-307X/27/5/057104
收录类别	SCI
语种	英语
资助项目	Chinese Academy of Sciences[YYYJ-0701-02] ; Chinese Academy of Sciences[IS-CAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02] ; National Natural Sciences Foundation of China[60890193] ; National Natural Sciences Foundation of China[60906006] ; National Basic Research Program of China[2006CB604905]
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
WOS记录号	WOS:000277344700058
出版者	IOP PUBLISHING LTD
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/100634
专题	中国科学院金属研究所
通讯作者	Hou Qi-Feng
作者单位	1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Hou Qi-Feng,Wang Xiao-Liang,Xiao Hong-Ling,et al. Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN[J]. CHINESE PHYSICS LETTERS,2010,27(5):4.
APA	Hou Qi-Feng,Wang Xiao-Liang,Xiao Hong-Ling,Wang Cui-Mei,Yang Cui-Bai,&Li Jin-Min.(2010).Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN.CHINESE PHYSICS LETTERS,27(5),4.
MLA	Hou Qi-Feng,et al."Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN".CHINESE PHYSICS LETTERS 27.5(2010):4.