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Magnetic and transport properties of Mn3+x Ga1-x N compounds
Feng, W. J.1,2,3; Li, D.2,3; Deng, Y. F.1; Zhang, Q.2,3; Zhang, H. H.1; Zhang, Z. D.2,3
Corresponding AuthorFeng, W. J.(wjfeng@yahoo.com.cn)
2010-05-01
Source PublicationJOURNAL OF MATERIALS SCIENCE
ISSN0022-2461
Volume45Issue:10Pages:2770-2774
AbstractMn3+x Ga1-x N compounds with x = 0.0 and 0.1 were prepared by re-sintering Mn2N0.86, Ga bulk and Mn powders. These compounds are deduced to be the N-deficiency ones. In Mn3GaN, a step-like magnetic transition, from frustrated antiferromagnetism to paramagnetism with increasing temperature, occurs at 370 K, while the same magnetic transition of Mn3.1Ga0.9N is far above 380 K. The enhanced magnetization of Mn3GaN at low temperatures is ascribed to the fast lowering of antiferromagnetism. The electrical resistivity of Mn3GaN exhibits a typically metallic conducting behavior with a positive magnetoresistance of 4-7%.
Funding OrganizationNational Natural Science Foundation of China ; Liaoning Province ; Open Fund of Laboratory Centre of Shenyang Normal University
DOI10.1007/s10853-010-4265-2
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[50332020] ; Liaoning Province[20072056] ; Open Fund of Laboratory Centre of Shenyang Normal University[SYZX01]
WOS Research AreaMaterials Science
WOS SubjectMaterials Science, Multidisciplinary
WOS IDWOS:000275457100030
PublisherSPRINGER
Citation statistics
Cited Times:10[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/102231
Collection中国科学院金属研究所
Corresponding AuthorFeng, W. J.
Affiliation1.Shenyang Normal Univ, Coll Phys Sci & Technol, Shenyang 110034, Peoples R China
2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
3.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China
Recommended Citation
GB/T 7714
Feng, W. J.,Li, D.,Deng, Y. F.,et al. Magnetic and transport properties of Mn3+x Ga1-x N compounds[J]. JOURNAL OF MATERIALS SCIENCE,2010,45(10):2770-2774.
APA Feng, W. J.,Li, D.,Deng, Y. F.,Zhang, Q.,Zhang, H. H.,&Zhang, Z. D..(2010).Magnetic and transport properties of Mn3+x Ga1-x N compounds.JOURNAL OF MATERIALS SCIENCE,45(10),2770-2774.
MLA Feng, W. J.,et al."Magnetic and transport properties of Mn3+x Ga1-x N compounds".JOURNAL OF MATERIALS SCIENCE 45.10(2010):2770-2774.
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