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Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy
Zhao, Jie1,2; Zeng, Yiping1,2; Liu, Chao1,2; Cui, Lijie1,2; Li, Yanbo1,2
Corresponding AuthorZhao, Jie(jiezhao@semi.ac.cn)
2010-09-01
Source PublicationAPPLIED SURFACE SCIENCE
ISSN0169-4332
Volume256Issue:22Pages:6881-6886
AbstractZnTe epilayers were grown on GaAs(0 0 1) substrates by molecular beam epitaxy (MBE) at different VI/II beam equivalent pressure (BEP) ratios (R(VI/II)) in a wide range of 0.96-11 with constant Zn flux. Based on in situ reflection high-energy electron diffraction (RHEED) observation, two-dimensional (2D) growth mode can be formed by increasing the R(VI/II) to 2.8. The Te/Zn pressure ratios lower than 4.0 correspond to Zn-rich growth state, while the ratios over 6.4 correspond to Te-rich one. The Zn sticking coefficient at various VI/II ratios are derived by the growth rate measurement. The ZnTe epilayer grown at a R(VI/II) of 6.4 displays the narrowest full-width at half-maximum (FWHM) of double-crystal X-ray rocking curve (DCXRC) for (0 0 4) reflection. Atomic force microscopy (AFM) characterization shows that the grain size enlarges drastically with the R(VI/II). The surface root-mean-square (RMS) roughness decreases firstly, attains a minimum of 1.14 nm at a R(VI/II) of 4.0 and then increases at higher ratios. It is suggested that the most suitable R(VI/II) be controlled between 4.0 and 6.4 in order to grow high-quality ZnTe epitaxial thin films. (C) 2010 Elsevier B. V. All rights reserved.
KeywordZnTe Molecular beam epitaxy Reflection high-energy electron diffraction X-ray diffraction Atomic force microscopy
Funding OrganizationKnowledge Innovation Program Foundation of Institute of semiconductors, Chinese Academy of Sciences ; National Natural Science Foundation of China
DOI10.1016/j.apsusc.2010.04.105
Indexed BySCI
Language英语
Funding ProjectKnowledge Innovation Program Foundation of Institute of semiconductors, Chinese Academy of Sciences[09S1010001] ; National Natural Science Foundation of China[0913120000]
WOS Research AreaChemistry ; Materials Science ; Physics
WOS SubjectChemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000278908900066
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:6[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/102702
Collection中国科学院金属研究所
Corresponding AuthorZhao, Jie
Affiliation1.Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Zhao, Jie,Zeng, Yiping,Liu, Chao,et al. Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy[J]. APPLIED SURFACE SCIENCE,2010,256(22):6881-6886.
APA Zhao, Jie,Zeng, Yiping,Liu, Chao,Cui, Lijie,&Li, Yanbo.(2010).Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy.APPLIED SURFACE SCIENCE,256(22),6881-6886.
MLA Zhao, Jie,et al."Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy".APPLIED SURFACE SCIENCE 256.22(2010):6881-6886.
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