IMR OpenIR
First-principles study on the electronic structure of dilute magnetic semiconductor Ga1-xCrxP in zinc-blende phase
Huang, H. M.1; Luo, S. J.1; Yao, K. L.2,3
Corresponding AuthorHuang, H. M.(smilehhm@163.com)
2011-05-01
Source PublicationPHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
ISSN0370-1972
Volume248Issue:5Pages:1258-1263
AbstractWe employ the full potential linearized augmented plane wave (FP-LAPW) method based on spin-polarized density functional theory (DFT) in order to investigate the structural, electronic, and magnetic properties of ordered dilute magnetic semiconductor (DMS) Ga1-xCrxP in zinc-blende phase. The calculated electronic band structures and density of states of these DMSs are discussed. The results show that the ferromagnetic states are more favorable in energy than antiferromagnetic states. Ga1-xCrxP for x = 0.125, 0.25, and 0.50 exhibits half-metallic (HM) characteristic with integral magnetic moment, and the sensitivity of half-metallicity of Ga1-xCrxP as a function of lattice constant is also discussed. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Keyworddilute magnetic semiconductors density functional theory electron density of states GaCrP
Funding OrganizationNational Natural Science Foundation of China ; Excellent Middle Age and the Youth People Science and Technology Creative Team Foundation of the Educational Department of the Hubei Province
DOI10.1002/pssb.201046470
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[10974048] ; Excellent Middle Age and the Youth People Science and Technology Creative Team Foundation of the Educational Department of the Hubei Province[T200805]
WOS Research AreaPhysics
WOS SubjectPhysics, Condensed Matter
WOS IDWOS:000289997700043
PublisherWILEY-BLACKWELL
Citation statistics
Cited Times:8[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/103481
Collection中国科学院金属研究所
Corresponding AuthorHuang, H. M.
Affiliation1.Hubei Univ Automot Technol, Sch Sci, Shiyan 442002, Peoples R China
2.Huazhong Univ Sci & Technol, Sch Phys, Wuhan 430074, Peoples R China
3.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110015, Peoples R China
Recommended Citation
GB/T 7714
Huang, H. M.,Luo, S. J.,Yao, K. L.. First-principles study on the electronic structure of dilute magnetic semiconductor Ga1-xCrxP in zinc-blende phase[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,2011,248(5):1258-1263.
APA Huang, H. M.,Luo, S. J.,&Yao, K. L..(2011).First-principles study on the electronic structure of dilute magnetic semiconductor Ga1-xCrxP in zinc-blende phase.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,248(5),1258-1263.
MLA Huang, H. M.,et al."First-principles study on the electronic structure of dilute magnetic semiconductor Ga1-xCrxP in zinc-blende phase".PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 248.5(2011):1258-1263.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Huang, H. M.]'s Articles
[Luo, S. J.]'s Articles
[Yao, K. L.]'s Articles
Baidu academic
Similar articles in Baidu academic
[Huang, H. M.]'s Articles
[Luo, S. J.]'s Articles
[Yao, K. L.]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Huang, H. M.]'s Articles
[Luo, S. J.]'s Articles
[Yao, K. L.]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.