| Computational Investigation of InxGa1-xN/InN Quantum-Dot Intermediate-Band Solar Cell | |
| Deng Qing-Wen1; Wang Xiao-Liang1,2,3; Yang Cui-Bai1,2; Xiao Hong-Ling1,2; Wang Cui-Mei1,2; Yin Hai-Bo1,2; Hou Qi-Feng1; Bi Yang1; Li Jin-Min1,3; Wang Zhan-Guo2; Hou Xun3 | |
| Corresponding Author | Deng Qing-Wen(daven@semi.ac.cn) |
| 2011 | |
| Source Publication | CHINESE PHYSICS LETTERS
 |
| ISSN | 0256-307X |
| Volume | 28Issue:1Pages:4 |
| Abstract | An InxGa1-xN/InN quantum-dot intermediate-band solar cell is calculated by means of solving the Schrodinger equation according to the Kronig-Penney model. Based on particular assumptions, the power conversion efficiency is worked out. The results reveal that the InxGa1-xN/InN quantum-dot intermediate-band solar cell manifests much larger power conversion efficiency than that of p-n junction solar cells, and the power conversion efficiency strongly depends on the size of the quantum dot and the interdot distance. |
| Funding Organization | Chinese Academy of Sciences ; National Natural Sciences Foundation of China ; National Basic Research Program of China |
| DOI | 10.1088/0256-307X/28/1/018401 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | Chinese Academy of Sciences[YYYJ-0701-02] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02] ; National Natural Sciences Foundation of China[60890193] ; National Natural Sciences Foundation of China[60906006] ; National Basic Research Program of China[2006CB604905] ; National Basic Research Program of China[2010CB327503] |
| WOS Research Area | Physics |
| WOS Subject | Physics, Multidisciplinary |
| WOS ID | WOS:000285966900057 |
| Publisher | IOP PUBLISHING LTD |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/103530 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Deng Qing-Wen |
| Affiliation | 1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China |
| Recommended Citation GB/T 7714 | Deng Qing-Wen,Wang Xiao-Liang,Yang Cui-Bai,et al. Computational Investigation of InxGa1-xN/InN Quantum-Dot Intermediate-Band Solar Cell[J]. CHINESE PHYSICS LETTERS,2011,28(1):4. |
| APA | Deng Qing-Wen.,Wang Xiao-Liang.,Yang Cui-Bai.,Xiao Hong-Ling.,Wang Cui-Mei.,...&Hou Xun.(2011).Computational Investigation of InxGa1-xN/InN Quantum-Dot Intermediate-Band Solar Cell.CHINESE PHYSICS LETTERS,28(1),4. |
| MLA | Deng Qing-Wen,et al."Computational Investigation of InxGa1-xN/InN Quantum-Dot Intermediate-Band Solar Cell".CHINESE PHYSICS LETTERS 28.1(2011):4. |
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