Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO2 films using Ge-ion implantation and neutron irradiation methods

doi:10.1063/1.3553770

IMR OpenIR

	Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO2 films using Ge-ion implantation and neutron irradiation methods
	Chen, Q.1,2; Lu, T.1,2; Xu, M.3,4; Meng, C.5; Hu, Y.1,2; Sun, K.6,7; Shlimak, I.8,9
通讯作者	Chen, Q.()
	2011-02-14
发表期刊	APPLIED PHYSICS LETTERS
ISSN	0003-6951
卷号	98 期号:7 页码:3
摘要	Uniform Ge-nanocrystals (Ge-ncs) embedded in amorphous SiO2 film were formed by using Ge-74(+) ion implantation and neutron transmutation doping (NTD) method. Both experimental and theoretical results indicate that the existence of As dopants transmuted from Ge-74 by NTD tunes the already stabilized (crystallized) system back to a metastable state and then activates the mass transfer processes during the transition form this metastable state back to the stable (crystallized) state, and hence the nanocrystal size uniformity and higher volume density of Ge-ncs. This method has the potential to open a route in the three-dimensional nanofabrication. (C) 2011 American Institute of Physics. [doi:10.1063/1.3553770]
资助者	NASF of NSFC-CAEP of China ; Program for New Century Excellent Talents in University ; Sichuan Youth Science & Technology Foundation, China
DOI	10.1063/1.3553770
收录类别	SCI
语种	英语
资助项目	NASF of NSFC-CAEP of China[10376020] ; Program for New Century Excellent Talents in University[NCET-04-0874] ; Sichuan Youth Science & Technology Foundation, China[08ZQ026-025]
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000287507200059
出版者	AMER INST PHYSICS
引用统计	被引频次：9[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/103693
专题	中国科学院金属研究所
通讯作者	Chen, Q.
作者单位	1.Sichuan Univ, Dept Phys, Chengdu 610064, Peoples R China 2.Sichuan Univ, Key Lab Radiat Phys & Technol Minist Educ, Chengdu 610064, Peoples R China 3.Sichuan Normal Univ, Inst Solid State Phys, Chengdu 610068, Peoples R China 4.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China 5.China Acad Engn Phys, Inst Fluid Phys, Key Lab Shock Wave & Detonat Phys Res, Mianyang 621900, Peoples R China 6.Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA 7.Univ Michigan, Elect Microbeam Anal Lab, Ann Arbor, MI 48109 USA 8.Bar Ilan Univ, Dept Phys, Minerva Ctr, IL-52900 Ramat Gan, Israel 9.Bar Ilan Univ, Jack & Pearl Resnick Inst Adv Technol, IL-52900 Ramat Gan, Israel
推荐引用方式 GB/T 7714	Chen, Q.,Lu, T.,Xu, M.,et al. Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO2 films using Ge-ion implantation and neutron irradiation methods[J]. APPLIED PHYSICS LETTERS,2011,98(7):3.
APA	Chen, Q..,Lu, T..,Xu, M..,Meng, C..,Hu, Y..,...&Shlimak, I..(2011).Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO2 films using Ge-ion implantation and neutron irradiation methods.APPLIED PHYSICS LETTERS,98(7),3.
MLA	Chen, Q.,et al."Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO2 films using Ge-ion implantation and neutron irradiation methods".APPLIED PHYSICS LETTERS 98.7(2011):3.