IMR OpenIR
Joining of Ti3SiC2 by Magnetron Sputtering a Layer of Cu or Zr Followed by Heat Treating at Relatively Low Temperatures
Li, Aijun1,2; Zhou, Yanchun1
Corresponding AuthorZhou, Yanchun(yczhou714@gmail.com)
2011-09-01
Source PublicationJOURNAL OF THE AMERICAN CERAMIC SOCIETY
ISSN0002-7820
Volume94Issue:9Pages:3072-3077
AbstractTi3SiC2 joining has been successfully achieved by depositing a thin Cu or Zr layer on it and heat treating at low temperatures of 950 degrees or 1100 degrees C in an argon atmosphere, respectively, which are similar to 500 degrees C lower than the previous solid solution joining method. X-ray diffraction and scanning electron microscope analyses reveal that a continuous Cu3Si or Zr-silicide layer forms at the joint interface through the outward diffusion of Si atoms from the Ti3SiC2 substrate into the deposited Cu or Zr layer. The strength of joints is evaluated by tensile bond-strength test and 4-point bending test methods. The Ti3SiC2/Cu/Ti3SiC2 joints always fail from the substrate instead of from the bonding interface, while the Ti3SiC2/Zr/Ti3SiC2 joints fail from the joint interface during tensile bond-strength test. The 4-point bending strength of Ti3SiC2/Cu/Ti3SiC2 joints reaches a value of 238 MPa, which is 68% of the Ti3SiC2 substrate. So joining using a Cu or Zr film as the interlayer followed by heat treating is a practical and efficient method for joining Ti3SiC2.
Funding OrganizationNational Outstanding Young Scientist Foundation ; Natural Science Foundation of China ; French Atomic Agency (CEA)
DOI10.1111/j.1551-2916.2011.04566.x
Indexed BySCI
Language英语
Funding ProjectNational Outstanding Young Scientist Foundation[59925208] ; Natural Science Foundation of China[50232040] ; Natural Science Foundation of China[50302011] ; Natural Science Foundation of China[90403027] ; Natural Science Foundation of China[50772114] ; Natural Science Foundation of China[50832008] ; French Atomic Agency (CEA)
WOS Research AreaMaterials Science
WOS SubjectMaterials Science, Ceramics
WOS IDWOS:000295215900062
PublisherWILEY-BLACKWELL
Citation statistics
Cited Times:8[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/103787
Collection中国科学院金属研究所
Corresponding AuthorZhou, Yanchun
Affiliation1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China
2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
Recommended Citation
GB/T 7714
Li, Aijun,Zhou, Yanchun. Joining of Ti3SiC2 by Magnetron Sputtering a Layer of Cu or Zr Followed by Heat Treating at Relatively Low Temperatures[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY,2011,94(9):3072-3077.
APA Li, Aijun,&Zhou, Yanchun.(2011).Joining of Ti3SiC2 by Magnetron Sputtering a Layer of Cu or Zr Followed by Heat Treating at Relatively Low Temperatures.JOURNAL OF THE AMERICAN CERAMIC SOCIETY,94(9),3072-3077.
MLA Li, Aijun,et al."Joining of Ti3SiC2 by Magnetron Sputtering a Layer of Cu or Zr Followed by Heat Treating at Relatively Low Temperatures".JOURNAL OF THE AMERICAN CERAMIC SOCIETY 94.9(2011):3072-3077.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Li, Aijun]'s Articles
[Zhou, Yanchun]'s Articles
Baidu academic
Similar articles in Baidu academic
[Li, Aijun]'s Articles
[Zhou, Yanchun]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Li, Aijun]'s Articles
[Zhou, Yanchun]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.