| Perpendicular magnetic anisotropy in 70 nm CoFe2O4 thin films fabricated on SiO2/Si(100) by the sol-gel method | |
| Wang, X. W.; Zhang, Y. Q.1; Meng, H.; Wang, Z. J.; Zhang, Z. D. | |
| Corresponding Author | Zhang, Y. Q.(yqzhang@imr.ac.cn) |
| 2011-07-21 | |
| Source Publication | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| ISSN | 0925-8388 |
| Volume | 509Issue:29Pages:7803-7807 |
| Abstract | Cobalt ferrite CoFe2O4 films were fabricated on SiO2/Si(1 0 0) by the sol-gel method. Films crystallized at/above 600 degrees C are stoichiometric as expected. With increase of the annealing temperature from 600 degrees C to 750 degrees C, the columnar grain size of CoFe2O4 film increases from 13 nm to 50 nm, resulting in surface roughness increasing from 0.46 nm to 2.55 nm. Magnetic hysteresis loops in both in-plane and out-of-plane directions, at different annealing temperatures, indicate that the films annealed at 750 degrees C exhibit obvious perpendicular magnetic anisotropy. Simultaneously, with the annealing temperature increasing from 600 degrees C to 750 degrees C, the out of plane coercivity increases from 1 kOe to 2.4 kOe and the corresponding saturation magnetization increases from 200 emu/cm(3) to 283 emu/cm(3). In addition, all crystallized films exhibit cluster-like structured magnetic domains. (C) 2011 Elsevier B.V. All rights reserved. |
| Keyword | CoFe2O4 Thin films Sol-gel method Magnetic anisotropy |
| Funding Organization | Chinese Academy of Sciences ; National Natural Science Foundation of China ; Ministry of Science and Technology of China |
| DOI | 10.1016/j.jallcom.2011.05.021 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | Chinese Academy of Sciences ; National Natural Science Foundation of China[50802098] ; National Natural Science Foundation of China[51072202] ; Ministry of Science and Technology of China[2010CB934603] |
| WOS Research Area | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS Subject | Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| WOS ID | WOS:000291473500030 |
| Publisher | ELSEVIER SCIENCE SA |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/103950 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Zhang, Y. Q. |
| Affiliation | 1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China 2.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China |
| Recommended Citation GB/T 7714 | Wang, X. W.,Zhang, Y. Q.,Meng, H.,et al. Perpendicular magnetic anisotropy in 70 nm CoFe2O4 thin films fabricated on SiO2/Si(100) by the sol-gel method[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2011,509(29):7803-7807. |
| APA | Wang, X. W.,Zhang, Y. Q.,Meng, H.,Wang, Z. J.,&Zhang, Z. D..(2011).Perpendicular magnetic anisotropy in 70 nm CoFe2O4 thin films fabricated on SiO2/Si(100) by the sol-gel method.JOURNAL OF ALLOYS AND COMPOUNDS,509(29),7803-7807. |
| MLA | Wang, X. W.,et al."Perpendicular magnetic anisotropy in 70 nm CoFe2O4 thin films fabricated on SiO2/Si(100) by the sol-gel method".JOURNAL OF ALLOYS AND COMPOUNDS 509.29(2011):7803-7807. |
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