Perpendicular magnetic anisotropy in 70 nm CoFe2O4 thin films fabricated on SiO2/Si(100) by the sol-gel method

doi:10.1016/j.jallcom.2011.05.021

IMR OpenIR

	Perpendicular magnetic anisotropy in 70 nm CoFe2O4 thin films fabricated on SiO2/Si(100) by the sol-gel method
	Wang, X. W.; Zhang, Y. Q.1; Meng, H.; Wang, Z. J.; Zhang, Z. D.
通讯作者	Zhang, Y. Q.(yqzhang@imr.ac.cn)
	2011-07-21
发表期刊	JOURNAL OF ALLOYS AND COMPOUNDS
ISSN	0925-8388
卷号	509 期号:29 页码:7803-7807
摘要	Cobalt ferrite CoFe2O4 films were fabricated on SiO2/Si(1 0 0) by the sol-gel method. Films crystallized at/above 600 degrees C are stoichiometric as expected. With increase of the annealing temperature from 600 degrees C to 750 degrees C, the columnar grain size of CoFe2O4 film increases from 13 nm to 50 nm, resulting in surface roughness increasing from 0.46 nm to 2.55 nm. Magnetic hysteresis loops in both in-plane and out-of-plane directions, at different annealing temperatures, indicate that the films annealed at 750 degrees C exhibit obvious perpendicular magnetic anisotropy. Simultaneously, with the annealing temperature increasing from 600 degrees C to 750 degrees C, the out of plane coercivity increases from 1 kOe to 2.4 kOe and the corresponding saturation magnetization increases from 200 emu/cm(3) to 283 emu/cm(3). In addition, all crystallized films exhibit cluster-like structured magnetic domains. (C) 2011 Elsevier B.V. All rights reserved.
关键词	CoFe2O4 Thin films Sol-gel method Magnetic anisotropy
资助者	Chinese Academy of Sciences ; National Natural Science Foundation of China ; Ministry of Science and Technology of China
DOI	10.1016/j.jallcom.2011.05.021
收录类别	SCI
语种	英语
资助项目	Chinese Academy of Sciences ; National Natural Science Foundation of China[50802098] ; National Natural Science Foundation of China[51072202] ; Ministry of Science and Technology of China[2010CB934603]
WOS研究方向	Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:000291473500030
出版者	ELSEVIER SCIENCE SA
引用统计	被引频次：32[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/103950
专题	中国科学院金属研究所
通讯作者	Zhang, Y. Q.
作者单位	1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China 2.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Wang, X. W.,Zhang, Y. Q.,Meng, H.,et al. Perpendicular magnetic anisotropy in 70 nm CoFe2O4 thin films fabricated on SiO2/Si(100) by the sol-gel method[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2011,509(29):7803-7807.
APA	Wang, X. W.,Zhang, Y. Q.,Meng, H.,Wang, Z. J.,&Zhang, Z. D..(2011).Perpendicular magnetic anisotropy in 70 nm CoFe2O4 thin films fabricated on SiO2/Si(100) by the sol-gel method.JOURNAL OF ALLOYS AND COMPOUNDS,509(29),7803-7807.
MLA	Wang, X. W.,et al."Perpendicular magnetic anisotropy in 70 nm CoFe2O4 thin films fabricated on SiO2/Si(100) by the sol-gel method".JOURNAL OF ALLOYS AND COMPOUNDS 509.29(2011):7803-7807.