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VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy
Zhao, Jie1,2; Zeng, Yiping1,2; Yang, Qiumin1,2; Li, Yiyang1,2; Cui, Lijie1,2; Liu, Chao1,2
Corresponding AuthorZhao, Jie(jiezhao@semi.ac.cn)
2011-08-15
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume329Issue:1Pages:1-5
AbstractCdSe epilayers were grown on GaAs(0 0 1) substrates by molecular beam epitaxy (MBE) in a wide range of VI/II beam-equivalent-pressure (BEP) ratio from 1.1 to 8.5. X-ray diffraction (XRD) theta-2 theta scan reveals all the CdSe samples possess cubic zinc blende structure with (0 0 1) orientation. The film grown at a low VI/II ratio of 1.1 has rough surface with a three-dimensional (3D) growth mode, while two-dimensional (2D) growth can be established under Se-rich conditions at higher Se/Cd BEP ratios over 4.4. The growth rate increases monotonically with the VI/II ratio and becomes saturated when the ratio is raised to 8.5. The sample grown at a VI/II ratio of 8.5 shows the narrowest full-width at half-maximum (FWHM) of X-ray rocking curve (XRC) for (0 0 4) reflection. No near-band-edge (NBE) emission of CdSe is observed for the sample prepared at a low ratio of 1.1. The NBE emission from cubic CdSe at around 1.67 eV appears and its intensity is markedly enhanced by elevating the VI/II ratio. It is suggested that CdSe epilayer with good structural and optical properties can be prepared under a large VI/II BEP ratio. (C) 2011 Elsevier B.V. All rights reserved.
KeywordReflection high-energy electron diffraction X-ray diffraction Atomic force microscopy Molecular beam epitaxy Cadmium compounds Semiconducting II-VI materials
Funding OrganizationKnowledge Innovation Program Foundation of Institute of semiconductors, Chinese Academy of Sciences ; National Natural Science Foundation of China
DOI10.1016/j.jcrysgro.2011.06.029
Indexed BySCI
Language英语
Funding ProjectKnowledge Innovation Program Foundation of Institute of semiconductors, Chinese Academy of Sciences[09S1010001] ; National Natural Science Foundation of China[0913120000]
WOS Research AreaCrystallography ; Materials Science ; Physics
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000294104500001
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:6[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/104940
Collection中国科学院金属研究所
Corresponding AuthorZhao, Jie
Affiliation1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Zhao, Jie,Zeng, Yiping,Yang, Qiumin,et al. VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2011,329(1):1-5.
APA Zhao, Jie,Zeng, Yiping,Yang, Qiumin,Li, Yiyang,Cui, Lijie,&Liu, Chao.(2011).VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,329(1),1-5.
MLA Zhao, Jie,et al."VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 329.1(2011):1-5.
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