Surface characterization of AlGaN grown on Si (111) substrates

doi:10.1016/j.jcrysgro.2011.07.011

IMR OpenIR

	Surface characterization of AlGaN grown on Si (111) substrates
	Pan, Xu 1; Wang, Xiaoliang 1,2,3; Xiao, Hongling 1,2,3; Wang, Cuimei 1,2,3; Feng, Chun 1,2,3; Jiang, Lijuan 1,2,3; Yin, Haibo 1,2,3; Chen, Hong 1,2,3
通讯作者	Pan, Xu(xpan@semi.ac.cn)
	2011-09-15
发表期刊	JOURNAL OF CRYSTAL GROWTH
ISSN	0022-0248
卷号	331 期号:1 页码:29-32
摘要	Up to 500 nm thick crack-free Al0.25Ga0.75N and Al0.32Ga0.68N epilayers have been grown on Si (111) substrates. The surface morphology of samples was investigated by an optical microscope and a scanning electron microscope (SEM). Pits and shale-like surface structure have been observed. XRD rocking curve measurements indicate the crystal quality of samples. The analyses show that the Al source flux is an important factor in growing AlGaN on Si (111). The information from the Micro-Raman spectra supported that Al atoms are gathered at nearby areas of the pits originated from the AlN/Si (111) interface in the initial stage of AlGaN growth. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.
关键词	Island nucleation Raman scattering Si (111) substrate AlGaN epilayers
资助者	Knowledge Innovation Engineering of Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China ; Chinese Academy of Sciences
DOI	10.1016/j.jcrysgro.2011.07.011
收录类别	SCI
语种	英语
资助项目	Knowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB327503] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02]
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000295067900007
出版者	ELSEVIER SCIENCE BV
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/105221
专题	中国科学院金属研究所
通讯作者	Pan, Xu
作者单位	1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing, Peoples R China
推荐引用方式 GB/T 7714	Pan, Xu,Wang, Xiaoliang,Xiao, Hongling,et al. Surface characterization of AlGaN grown on Si (111) substrates[J]. JOURNAL OF CRYSTAL GROWTH,2011,331(1):29-32.
APA	Pan, Xu.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Feng, Chun.,...&Chen, Hong.(2011).Surface characterization of AlGaN grown on Si (111) substrates.JOURNAL OF CRYSTAL GROWTH,331(1),29-32.
MLA	Pan, Xu,et al."Surface characterization of AlGaN grown on Si (111) substrates".JOURNAL OF CRYSTAL GROWTH 331.1(2011):29-32.