Positive magnetoresistance in Fe3Se4 nanowires

doi:10.1063/1.3544508

IMR OpenIR

	Positive magnetoresistance in Fe3Se4 nanowires
	Li, D.1; Jiang, J. J.; Liu, W.; Zhang, Z. D.
通讯作者	Li, D.(dali@imr.ac.cn)
	2011-04-01
发表期刊	JOURNAL OF APPLIED PHYSICS
ISSN	0021-8979
卷号	109 期号:7 页码:3
摘要	We report the magnetotransport properties of Fe3Se4 nanowire arrays in anodic aluminum oxide (AAO) porous membrane. The temperature dependence of resistance of Fe3Se4 nanowires at a zero field shows thermal activated behavior below 295 K. The exponential relationship in resistance is consistent with the model of strong localization with variable-range hopping (VRH) for a finite one-dimensional wire. Resistance versus magnetic field curves below 100 K show small positive magnetoresistance (MR). The field dependencies of log[R(H)/R(0)] explain the positive MR as the effect of magnetic field on the VRH conduction. (C) 2011 American Institute of Physics. [doi:10.1063/1.3544508]
资助者	National Natural Science Foundation of China ; National Basic Research Program of China ; Ministry of Science and Technology of China
DOI	10.1063/1.3544508
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[50831006] ; National Natural Science Foundation of China[50701045] ; National Basic Research Program of China[2010CB934603] ; Ministry of Science and Technology of China
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000289952100114
出版者	AMER INST PHYSICS
引用统计	被引频次：14[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/105227
专题	中国科学院金属研究所
通讯作者	Li, D.
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Li, D.,Jiang, J. J.,Liu, W.,et al. Positive magnetoresistance in Fe3Se4 nanowires[J]. JOURNAL OF APPLIED PHYSICS,2011,109(7):3.
APA	Li, D.,Jiang, J. J.,Liu, W.,&Zhang, Z. D..(2011).Positive magnetoresistance in Fe3Se4 nanowires.JOURNAL OF APPLIED PHYSICS,109(7),3.
MLA	Li, D.,et al."Positive magnetoresistance in Fe3Se4 nanowires".JOURNAL OF APPLIED PHYSICS 109.7(2011):3.